Zobrazeno 1 - 10
of 502
pro vyhledávání: '"Orosa P"'
Publikováno v:
Case Studies in Construction Materials, Vol 21, Iss , Pp e04073- (2024)
In recent decades, sustainable practices in pavement construction have been studied to promote circular economy principles and protect the environment. This research seeks to determine the potential benefits of using three different industrial waste
Externí odkaz:
https://doaj.org/article/6a4dc2b69f714901b71fd882f1cc434c
Autor:
Ghiasi, Nika Mansouri, Vijaykumar, Nandita, Oliveira, Geraldo F., Orosa, Lois, Fernandez, Ivan, Sadrosadati, Mohammad, Kanellopoulos, Konstantinos, Hajinazar, Nastaran, Luna, Juan Gómez, Mutlu, Onur
Partitioning applications between NDP and host CPU cores causes inter-segment data movement overhead, which is caused by moving data generated from one segment (e.g., instructions, functions) and used in consecutive segments. Prior works take two app
Externí odkaz:
http://arxiv.org/abs/2212.06292
Autor:
Olgun, Ataberk, Hassan, Hasan, Yağlıkçı, A. Giray, Tuğrul, Yahya Can, Orosa, Lois, Luo, Haocong, Patel, Minesh, Ergin, Oğuz, Mutlu, Onur
To understand and improve DRAM performance, reliability, security and energy efficiency, prior works study characteristics of commodity DRAM chips. Unfortunately, state-of-the-art open source infrastructures capable of conducting such studies are obs
Externí odkaz:
http://arxiv.org/abs/2211.05838
Autor:
Manglik, Aditya, Patel, Minesh, Mao, Haiyu, Salami, Behzad, Park, Jisung, Orosa, Lois, Mutlu, Onur
Resistive Random-Access Memory (RRAM) is well-suited to accelerate neural network (NN) workloads as RRAM-based Processing-in-Memory (PIM) architectures natively support highly-parallel multiply-accumulate (MAC) operations that form the backbone of mo
Externí odkaz:
http://arxiv.org/abs/2211.05730
Autor:
Orosa, Lois, Rührmair, Ulrich, Yaglikci, A. Giray, Luo, Haocong, Olgun, Ataberk, Jattke, Patrick, Patel, Minesh, Kim, Jeremie, Razavi, Kaveh, Mutlu, Onur
RowHammer is a DRAM vulnerability that can cause bit errors in a victim DRAM row solely by accessing its neighboring DRAM rows at a high-enough rate. Recent studies demonstrate that new DRAM devices are becoming increasingly vulnerable to RowHammer,
Externí odkaz:
http://arxiv.org/abs/2210.04084
Autor:
Yağlıkçı, Abdullah Giray, Olgun, Ataberk, Patel, Minesh, Luo, Haocong, Hassan, Hasan, Orosa, Lois, Ergin, Oğuz, Mutlu, Onur
DRAM is the building block of modern main memory systems. DRAM cells must be periodically refreshed to prevent data loss. Refresh operations degrade system performance by interfering with memory accesses. As DRAM chip density increases with technolog
Externí odkaz:
http://arxiv.org/abs/2209.10198
Autor:
Yağlıkçı, A. Giray, Luo, Haocong, de Oliviera, Geraldo F., Olgun, Ataberk, Patel, Minesh, Park, Jisung, Hassan, Hasan, Kim, Jeremie S., Orosa, Lois, Mutlu, Onur
RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby rows. Recent D
Externí odkaz:
http://arxiv.org/abs/2206.09999
Publikováno v:
In Case Studies in Construction Materials December 2024 21
Autor:
Beatriz Pérez-Massón, Yazmina Quintana-Pérez, Yaima Tundidor, Dayana Pérez-Martínez, Camila Castro-Martínez, Mario Pupo-Meriño, Ivette Orosa, Ernesto Relova-Hernández, Rosmery Villegas, Osmany Guirola, Gertrudis Rojas
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-19 (2024)
Abstract SARS-CoV-2 receptor binding domain (RBD) mediates viral entry into human cells through its interaction with angiotensin converting enzyme 2 (ACE2). Most neutralizing antibodies elicited by infection or vaccination target this domain. Such a
Externí odkaz:
https://doaj.org/article/5fb8da803ded4e869e1bc185a4ff61c6
Autor:
Lois Orosa, Ulrich Ruhrmair, A. Giray Yaglikci, Haocong Luo, Ataberk Olgun, Patrick Jattke, Minesh Patel, Jeremie S. Kim, Kaveh Razavi, Onur Mutlu
Publikováno v:
IEEE Access, Vol 12, Pp 80986-81003 (2024)
RowHammer is a DRAM vulnerability that can cause bit errors in a victim DRAM row solely by accessing its neighboring DRAM rows at a high-enough rate. Recent studies demonstrate that new DRAM devices are becoming increasingly vulnerable to RowHammer,
Externí odkaz:
https://doaj.org/article/c3534af8fc7348539dfd4655eef132dd