Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Orkun Tan"'
Publikováno v:
Gynecology Obstetrics & Reproductive Medicine, Vol 12, Iss 1 (2006)
A 27 y ear old women at 23+1 weeks twin gestation deliv ered the f irst f etus. The umblical cord was ligated and the placenta was left in situ. No cerclage was applied. She was administered intravenous antibiotics and ritodrine. The second twin was
Externí odkaz:
https://doaj.org/article/77e1cf6659984c05aa00b218093b09cb
Publikováno v:
Engineering Science and Technology, an International Journal, Vol 27, Iss , Pp 101017- (2022)
The letter reports that the impedance spectroscopy method has been performed to acquire impeccable results on the ac electric conductivity (σac), dielectric (ε′ and ε′′) and electric modulus (M' and M'') components of the Al/Al2O3/p-Si type
Externí odkaz:
https://doaj.org/article/8a916ac6d5a74553974d9c234bf39143
Autor:
Serhat Orkun Tan
Publikováno v:
Hittite Journal of Science and Engineering, Vol 6, Iss 1, Pp 51-56 (2019)
Today, there are fairly large number of theoretical and experimental studies on metalsemiconductor structures or Schottky structures which formed by a tight contact of the metal and semiconductor. Having different physical, chemical and electrical pr
Externí odkaz:
https://doaj.org/article/d2ccb9326d144d088c6d2ecf92586743
Publikováno v:
Volume: 9, Issue: 4 554-561
Gazi University Journal of Science Part A: Engineering and Innovation
Gazi University Journal of Science Part A: Engineering and Innovation
Voltage and frequency dependent of capacitance and conductivity versus voltage (C&G/ω–V) qualifications of Al/(ZnFe2O4-PVA)/p-Si structure was compared and examined at lower and higher frequencies as 10 kHz and 1 MHz, respectively. The negative ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b72d40c160b090def3d6f1e3caba8f1b
https://doi.org/10.54287/gujsa.1206332
https://doi.org/10.54287/gujsa.1206332
Autor:
Jaafar Abdulkareem Mustafa Alsmael, Serhat Orkun Tan, Habibe Uslu Tecimer, Semsettin Altindal, Yashar Azizian Kalandaragh
Publikováno v:
IEEE Transactions on Nanotechnology. 21:528-533
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b4959b8e9d83ade1b767a41aa9d5e4
https://doi.org/10.1109/tnano.2022.3207900
https://doi.org/10.1109/tnano.2022.3207900
Publikováno v:
IEEE Transactions on Electron Devices. 68:5085-5089
MIS-type Al/Al2O3/p-Si structures were fabricated to identify its admittance analysis through capacitance/conductance versus logarithmic frequency ( ${C} / {G}$ – ${V}$ – ${f}$ ) data in the 1 kHz–5 MHz and ±3 V ranges at room temperature. Adm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ebdd672de542077b50a1bc3608ea051
https://doi.org/10.1109/ted.2021.3107229
https://doi.org/10.1109/ted.2021.3107229
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:26700-26708
The dielectric properties of MS structures without interlayer and with Al2O3 interlayer have been investigated in a wide frequency range under forward and reverse biases. In this context, parameters such as loss tangent (tan delta), dielectric consta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05e2bc7e933c0e2c7b28fa15d19d028d
https://doi.org/10.1007/s10854-021-07047-2
https://doi.org/10.1007/s10854-021-07047-2
Publikováno v:
Silicon. 12:2885-2891
Electrical data of the Schottky structure with CdZnO interlayer have been evaluated for different illumination intensities. Considering such parameters as, the ideality factor (n), reverse saturation current (I-o), zero bias barrier height (phi(Bo)),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1a6e08562a42dd3985b68295dbf2b0a
https://doi.org/10.1007/s12633-020-00382-9
https://doi.org/10.1007/s12633-020-00382-9
Current transport mechanisms (CTMs) and temperature sensing qualifications of Al/(ZnS-PVA)/p-Si structures are identified with the help of temperature-dependent forward bias current-voltage measurements. To determine the current transport mechanism,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7d55bab28b83a4409fd3f95fce20595
https://avesis.gazi.edu.tr/publication/details/288f5491-e8c3-464b-b117-bf1142fdf86d/oai
https://avesis.gazi.edu.tr/publication/details/288f5491-e8c3-464b-b117-bf1142fdf86d/oai
Autor:
Serhat Orkun Tan
Publikováno v:
IEEE Transactions on Nanotechnology. 18:432-436
Admittance measuring methods were applied for the dielectric characterization of a fabricated metal-semiconductor structure, which has a 150-nm polymer interlayer doped with Zn. The components of complex electric modulus and dielectric constant, loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1f9f281549c90ba842c320ef4df169a
https://doi.org/10.1109/tnano.2019.2912026
https://doi.org/10.1109/tnano.2019.2912026