Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Orfanidou, C. M."'
Autor:
Orfanidou, C. M., Giapintzakis, John
Publikováno v:
IEEE Transactions on Electron Devices
Silicon-on-insulator (SoI) devices are particularly interesting for thermal management studies as they suffer from severe self-heating because of the very low and isotropic thermal conductivity of silicon dioxide that is being used as a buried oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2aec23040a359229e4562fd56572ab4
https://doi.org/10.1109/ted.2013.2279311
https://doi.org/10.1109/ted.2013.2279311
Autor:
Mai, V. H., Moradpour, A., Senzier, P. A., Pasquier, C., Wang, K., Rozenberg, M. J., Giapintzakis, John, Mihailescu, C. N., Orfanidou, C. M., Svoukis, E., Breza, A., Lioutas, C. B., Franger, S., Revcolevschi, A., Maroutian, T., Lecoeur, P., Aubert, P., Agnus, G., Salot, R., Albouy, P. A., Weil, R., Alamarguy, D., March, K., Jomard, F., Chrétien, P., Schneegans, O.
Publikováno v:
Scientific Reports
Scientific Reports, Nature Publishing Group, 2015, 5, pp.7761. ⟨10.1038/srep07761⟩
Scientific Reports, 2015, 5, pp.7761. ⟨10.1038/srep07761⟩
Scientific Reports, Nature Publishing Group, 2015, 5, pp.7761. ⟨10.1038/srep07761⟩
Scientific Reports, 2015, 5, pp.7761. ⟨10.1038/srep07761⟩
International audience; The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db12ce2532d3cab2fa2b71651c8175a1
https://hal-centralesupelec.archives-ouvertes.fr/hal-01441071
https://hal-centralesupelec.archives-ouvertes.fr/hal-01441071
Autor:
Mai VH; 1] Laboratoire de Génie Électrique de Paris, CNRS-UMR 8507, Universités UPMC et Paris-Sud, Supélec, F-91192 Gif-sur-Yvette, France [2] Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France., Moradpour A; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France., Senzier PA; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France., Pasquier C; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France., Wang K; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France., Rozenberg MJ; 1] Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France [2] Departamento de Física Juan José Giambiagi, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellón I, (1428) Buenos Aires, Argentina., Giapintzakis J; Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus., Mihailescu CN; Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus., Orfanidou CM; Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus., Svoukis E; Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus., Breza A; 1] Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus [2] Physics Department, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece., Lioutas ChB; Physics Department, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece., Franger S; Laboratoire de Physico-Chimie de l'Etat Solide, CNRS-UMR 8182, Université Paris-Sud, F-91405 Orsay, France., Revcolevschi A; Laboratoire de Physico-Chimie de l'Etat Solide, CNRS-UMR 8182, Université Paris-Sud, F-91405 Orsay, France., Maroutian T; Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France., Lecoeur P; Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France., Aubert P; Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France., Agnus G; Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France., Salot R; Liten-CEA de Grenoble, F-38054 Grenoble, France., Albouy PA; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France., Weil R; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France., Alamarguy D; Laboratoire de Génie Électrique de Paris, CNRS-UMR 8507, Universités UPMC et Paris-Sud, Supélec, F-91192 Gif-sur-Yvette, France., March K; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France., Jomard F; Groupe d'Etude de la Matière Condensée, CNRS-UMR 8635, Université de Versailles Saint-Quentin-En-Yvelines, F-78035 Versailles, France., Chrétien P; Laboratoire de Génie Électrique de Paris, CNRS-UMR 8507, Universités UPMC et Paris-Sud, Supélec, F-91192 Gif-sur-Yvette, France., Schneegans O; Laboratoire de Génie Électrique de Paris, CNRS-UMR 8507, Universités UPMC et Paris-Sud, Supélec, F-91192 Gif-sur-Yvette, France.
Publikováno v:
Scientific reports [Sci Rep] 2015 Jan 14; Vol. 5, pp. 7761. Date of Electronic Publication: 2015 Jan 14.