Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Oren Knopfmacher"'
Autor:
Suzanne Putney, Andrew H. Theiss, Nitin K. Rajan, Eszter Deak, Creighton Buie, Yvonne Ngo, Hima Shah, Victoria Yuan, Elizabeth Botbol-Ponte, Adrian Hoyos-Urias, Oren Knopfmacher, Catherine A. Hogan, Niaz Banaei, Meike S. Herget
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract A key predictor of morbidity and mortality for patients with a bloodstream infection is time to appropriate antimicrobial therapy. Accelerating antimicrobial susceptibility testing from positive blood cultures is therefore key to improving p
Externí odkaz:
https://doaj.org/article/3a0d158affe14e59898388fa93ad2ee1
Publikováno v:
ACS Nano. 7:3970-3980
Biodetection using organic field-effect transistors (OFETs) is gaining increasing interest for applications as diverse as food security, environmental monitoring, and medical diagnostics. However, there still lacks a comprehensive, empirical study on
Autor:
Michel Calame, Wangyang Fu, Alexey Tarasov, Mathias Wipf, Oren Knopfmacher, Christian Schönenberger
Publikováno v:
ChemPhysChem. 13:1157-1160
wherethe interface between the tran-sistor channel and the solutionwas made from silica, we demonstrate here that FETs coveredwith a thin alumina layer are almost insensitive to ions at dif-ferent concentrations except for hydrogen ions. Such FETs ar
Publikováno v:
Procedia Chemistry. 1(1):678-681
Silicon Nanowire field effect transistors (SiNWFETs) are ideal candidates for basic sensing units. We report here on a top down fabrication process in SOI wafers yielding SiNWFETs. We operate the SiNWFETs in a liquid cell and control their operation
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 26(35)
Organic field-effect transistor (OFET) sensors can meet the need for portable and real-time diagnostics. An electronicreadout enzyme-linked immunosorbent assay using OFETs for the detection of a panel of three biomarkers in complex media to create a
Autor:
Jianguo Mei, Ting Lei, Gregor Schwartz, Jian Pei, Mallory L. Hammock, Zhenan Bao, Oren Knopfmacher, Anthony L. Appleton
Publikováno v:
Nature Communications. 5
In recent decades, the susceptibility to degradation in both ambient and aqueous environments has prevented organic electronics from gaining rapid traction for sensing applications. Here we report an organic field-effect transistor sensor that overco
Autor:
Michel Calame, Markus Weiss, Wangyang Fu, Alexey Tarasov, Oren Knopfmacher, Cornelia Nef, Mathias Wipf, Ralph L. Stoop, Christian Schönenberger
Publikováno v:
Nanoscale. 5(24)
Noncovalent functionalization is a well-known nondestructive process for property engineering of carbon nanostructures, including carbon nanotubes and graphene. However, it is not clear to what extend the extraordinary electrical properties of these
Autor:
Kristine Bedner, Vitaliy A. Guzenko, Oren Knopfmacher, Mathias Wipf, Michel Calame, Ralph L. Stoop, Wangyang Fu, Alexey Tarasov, Christian Schönenberger
Publikováno v:
ACS nano. 6(10)
Silicon nanowire field-effect transistors have attracted substantial interest for various biochemical sensing applications, yet there remains uncertainty concerning their response to changes in the supporting electrolyte concentration. In this study,
Autor:
Markus Weiss, Christian Schönenberger, Alexey Tarasov, Wangyang Fu, Oren Knopfmacher, Michel Calame, Mathias Wipf, Cornelia Nef, Ralph L. Stoop
Publikováno v:
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO).
Liquid-gated graphene field-effect transistors (GFETs) with reliable performance are developed. It is revealed that ideal defect-free graphene should be inert to electrolyte composition changes in solution, whereas a defective one responses to electr
Autor:
Ralph L. Stoop, J. Kurz, Michel Calame, Wangyang Fu, Oren Knopfmacher, Christian Schönenberger, Vitaliy A. Guzenko, Kristine Bedner, Mathias Wipf, Alexey Tarasov
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 28(25)
Conventional gate oxide layers (e.g., SiO(2), Al(2)O(3), or HfO(2)) in silicon field-effect transistors (FETs) provide highly active surfaces, which can be exploited for electronic pH sensing. Recently, great progress has been achieved in pH sensing