Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ook-Sang You"'
Autor:
Heui-Seung Lee, Kyong-Jin Hwang, Sung-Hyung Park, Jung-Eun Lim, In-Shik Han, Ook-Sang You, Won-Ho Choi, Hee-Hwan Ji, Hi-Deok Lee, Dae-Byung Kim
Publikováno v:
IEEE Transactions on Electron Devices. 55:1352-1358
This paper shows that dc device performance and reliability characteristics of CMOSFETs do not have the same dependence on the film stress of contact etch stopping layers (CESLs) in strained silicon technology. Two kinds of CESLs, namely, plasma-enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee4fc53cd53673f05433baec5a564b9
https://doi.org/10.1109/ted.2008.921061
https://doi.org/10.1109/ted.2008.921061
Autor:
Sung-Hyung Park, Heui-Seung Lee, Hee-Hwan Ji, Hi-Deok Lee, Tae-Gyu Goo, Ook-Sang You, In-Shik Han, Won-Ho Choi, Young-Seok Kang, Dae-Byung Kim
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 20:569-574
In this paper, the reliability (NBTI degradation: ) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3854d705ab96c3bb172d8b865accbc09
https://doi.org/10.4313/jkem.2007.20.7.569
https://doi.org/10.4313/jkem.2007.20.7.569
Autor:
Won-Ho Choi, Min-Ki Na, Tae-Gyu Goo, Dae-Byung Kim, Hee-Hwan Ji, Yong-Goo Kim, Hi-Deok Lee, Young-Seok Kang, Ga-Won Lee, Heui-Seung Lee, Ook-Sang You, In-Shik Han, Sung-Hyung Park
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbcad02fada2fce9f9e32d88c145e480
https://doi.org/10.7567/ssdm.2007.p-3-14
https://doi.org/10.7567/ssdm.2007.p-3-14
Autor:
In-Shik Han, Won-Ho Choi, Dae M. Kim, Hee-Hwan Ji, Hi-Deok Lee, Bomsoo Kim, Tae-Gyu Goo, Ook-Sang You, Chang-Ki Baek, Younghwan Son
Publikováno v:
2006 IEEE Nanotechnology Materials and Devices Conference.
Presented in this paper is the extracted depth profile of oxide trap density in ultra thin remote plasma nitrided oxides (RPNO) using multi-frequency and temperature charge pumping (CP) technique. The optimum nitrogen concentration in RPNO is discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d7573dd2b9a3026aad1f8dbb91d6517
https://doi.org/10.1109/nmdc.2006.4388878
https://doi.org/10.1109/nmdc.2006.4388878
Autor:
In-Shik Han, Hee-Hwan Ji, Ook-Sang You, Won-Ho Choi, Jung-Eun Lim, Kyong-Jin Hwang, Sung-Hyung Park, Heui-Seung Lee, Dae-Byung Kim, Hi-Deok Lee
Publikováno v:
IEEE Transactions on Electron Devices; Jun2008, Vol. 55 Issue 6, p1352-1358, 7p