Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Ook-Sang Yoo"'
Autor:
Hyuk-Min Kwon, Hi-Deok Lee, Ook-Sang Yoo, R. Jammy, Jungwoo Oh, Min-Ki Na, H.-H. Tseng, Won-Ho Choi, In-Shik Han, Byung-Suk Park, Prashant Majhi
Publikováno v:
Microelectronic Engineering. 88:3424-3427
Analyzed herein is the impact of Si interface passivation layer (IPL) on device performance and reliability of Ge-on-Si field-effect transistors with HfSiO/TaN gate stack. Silicon passivation technique reduced the interface trap density as well as th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5186a2721599b42a42a00fd27d42d781
https://doi.org/10.1016/j.mee.2009.11.019
https://doi.org/10.1016/j.mee.2009.11.019
Autor:
Hee-Hwan Ji, Hi-Deok Lee, Du-Eung Kim, Younghwan Son, Han-Soo Joo, Ook-Sang Yoo, Tae-Gyu Goo, In-Shik Han, Chang-Ki Baek, Won-Ho Choi
Publikováno v:
IEEE Transactions on Nanotechnology. 8:654-658
This paper presents the depth profile of oxide trap density, extracted from the dual gate processed thermally grown oxide in NO ambient and remote plasma nitrided oxides by using multifrequency and multitemperature charge pumping technique in conjunc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018d04d9102572cff517cf0e37ce9202
https://doi.org/10.1109/tnano.2008.2009760
https://doi.org/10.1109/tnano.2008.2009760
Autor:
Hyuk-Min Kwon, Ook-Sang Yoo, In-Shik Han, Chang Yong Kang, Raj Jammy, Byoung Hun Lee, Yoon-Ha Jeong, Rino Choi, Hi-Deok Lee, Seung Chul Song, Min-Ki Na, Tae-Gyu Goo, Won-Ho Choi, Ga-Won Lee
Publikováno v:
Microelectronic Engineering. 86:268-271
For the first time, we present a comparative study on HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.8nm (T"i"n"v=1.2nm). A detailed DC analysis of I"o"n vs. I"o"f"f shows HfLaON performs somewhat better than HfLaSi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8270c4461d8f877f75f44ea97ebfc72e
https://doi.org/10.1016/j.mee.2008.04.008
https://doi.org/10.1016/j.mee.2008.04.008
Autor:
Min Ki Na, Jin-Suk Wang, Byoung Hun Lee, Jungwoo Oh, Ook Sang Yoo, Prashant Majhi, Kyung Seok Min, Hyuk-Min Kwon, Kyong Taek Lee, H-H. Tseng, Hi-Deok Lee, Chang Yong Kang, Raj Jammy
Publikováno v:
Microelectronic Engineering. 86:259-262
The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54356a8cc8bfe72c9f5dc9aaf96ea32a
https://doi.org/10.1016/j.mee.2008.04.024
https://doi.org/10.1016/j.mee.2008.04.024
Autor:
Jungwoo Oh, Hsing-Huang Tseng, Jin Suk Wang, Chang Yong Kang, Min Ki Na, B. H. Lee, Hi Deok Lee, Hyuk-Min Kwon, Ook Sang Yoo, In Shik Han, Prashant Majhi, Raj Jammy, Won Ho Choi
Publikováno v:
Materials Science and Engineering: B. :102-105
We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d88b1a6400bdf493f0c2d2129558cb6
https://doi.org/10.1016/j.mseb.2008.06.031
https://doi.org/10.1016/j.mseb.2008.06.031
Autor:
Dae-Byung Kim, Young-Seok Kang, Heui-Seung Lee, In-Shik Han, Min-Ki Na, Tae-Gyu Goo, Ook-Sang Yoo, Yong-Goo Kim, Hee-Hwan Ji, Hi-Deok Lee, Won-Ho Choi, Sung-Hyung Park
Publikováno v:
Japanese Journal of Applied Physics. 47:2628-2632
In this paper, we investigated the device performance and negative bias temperature instability (NBTI) degradation for thermally nitrided oxide (TNO) and plasma nitrided oxide (PNO) in nanoscale p-channel metal oxide semiconductor field effect transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd883dba4e7609bb6728598682289aea
https://doi.org/10.1143/jjap.47.2628
https://doi.org/10.1143/jjap.47.2628
Autor:
Hi-Deok Lee, Myoung-Gyu Choi, Won-Ho Choi, Tae-Gyu Goo, Han-Soo Joo, Ga-Won Lee, In-Shik Han, Ook-Sang Yoo
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 20:1-7
In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: ) and RTO(Rapid Thermal Oxidation: ) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a3b6b2f1c7035e27c1a110b81ed321
https://doi.org/10.4313/jkem.2007.20.1.001
https://doi.org/10.4313/jkem.2007.20.1.001
Autor:
Rino Choi, Byung Sun Ju, Ook Sang Yoo, R. Jammy, Yoon-Ha Jeong, Byoung Hun Lee, Kyong Taek Lee, Kyung Seok Min, Chang Yong Kang, Hi-Deok Lee, J.C. Lee
Publikováno v:
IEEE Electron Device Letters. 29:565-567
The effects of in situ O2 plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was found that the O2 plasma treatment can be employed for mitigating the formation of a leakage pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ec1712dd6744957220aaa657bc8b87c
https://doi.org/10.1109/led.2008.922992
https://doi.org/10.1109/led.2008.922992
Autor:
J.C. Lee, B. H. Lee, Chang Yong Kang, Yoon-Ha Jeong, Ook Sang Yoo, Kyong Taek Lee, Rino Choi, Hi-Deok Lee
Publikováno v:
IEEE Electron Device Letters. 29:389-391
Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs) becomes more significant than positive bias temperature stress. In an analysis of metal-gate/hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374a280ae0ccdfb7349c76e8c5f02777
https://doi.org/10.1109/led.2008.918257
https://doi.org/10.1109/led.2008.918257
Autor:
Hyuk-Min Kwon, Hi-Deok Lee, Sung Soo Park, Ook-Sang Yoo, Kwang-Il Choi, I. S. Han, Min-Ki Na, Han-Soo Joo, Seaung-Suk Lee, Won-Ho Choi, Dong-Ho Nam, Jae-Chul Om, Ga-Won Lee
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::575cf661d44edcfc416560c88aad101a
https://doi.org/10.7567/ssdm.2008.j-6-4
https://doi.org/10.7567/ssdm.2008.j-6-4