Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Onur Çakıroğlu"'
Autor:
Sergio Puebla, Hao Li, Onur Çakıroğlu, Estrella Sánchez-Viso, C. Munuera, Roberto D’Agosta, Andres Castellanos-Gomez
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract This work investigates the vibrational and electrical properties of molybdenum trioxide (α-MoO3) upon tensile strain applied along different crystal directions. Using a three-point bending setup in combination with Raman spectroscopy, we re
Externí odkaz:
https://doaj.org/article/cb077ed7243d42d59c24a16aca22fc4d
Autor:
Wenliang Zhang, Onur Çakıroğlu, Abdullah Al-Enizi, Ayman Nafady, Xuetao Gan, Xiaohua Ma, Sruthi Kuriakose, Yong Xie, Andres Castellanos-Gomez
Publikováno v:
Opto-Electronic Advances, Vol 6, Iss 3, Pp 1-11 (2023)
Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics. Herein, we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-perfor
Externí odkaz:
https://doaj.org/article/4f2e1b263fc346409ffbc78d04912082
Autor:
Anna Di Renzo, Onur Çakıroğlu, Felix Carrascoso, Hao Li, Giuseppe Gigli, Kenji Watanabe, Takashi Taniguchi, Carmen Munuera, Aurora Rizzo, Andres Castellanos-Gomez, Rosanna Mastria, Riccardo Frisenda
Publikováno v:
Nanomaterials, Vol 12, Iss 24, p 4425 (2022)
The field-effect control of the electrical and optical properties of two-dimensional (2D) van der Waals semiconductors (vdW) is one important aspect of this novel class of materials. Thanks to their reduced thickness and decreased screening, electric
Externí odkaz:
https://doaj.org/article/c1a39677a96048ffbcb5b2abc02a6377
Publikováno v:
Advanced Materials Technologies
This work presents an automated three-point bending apparatus that can be used to study strain engineering and straintronics in two-dimensional materials. We benchmark the system by reporting reproducible strain tuned micro-reflectance, Raman, and ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64cb7c09735a8b83dabb42920e219339
https://hdl.handle.net/11573/1654869
https://hdl.handle.net/11573/1654869
Publikováno v:
Advanced Materials Technologies. 8:2370005
Autor:
Mert Miraç Çiçek, Hamid Reza Rasouli, Serkan Talip Kasirga, Engin Durgun, Naveed Mehmood, Aizimaiti Aikebaier, Onur Çakıroğlu
Publikováno v:
2D Materials
Thermal conductivity measurement techniques for materials with nanoscale dimensions require fabrication of very complicated devices or their applicability is limited to a class of materials. Discovery of new methods with high thermal sensitivity are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fbc9ab1cbf5fe9e14fbffaf2651c136
https://aperta.ulakbim.gov.tr/record/11173
https://aperta.ulakbim.gov.tr/record/11173
Publikováno v:
Physical Review B. 100
Peculiar features exist in the stress-temperature phase stability diagram of ${\mathrm{V}}_{2}{\mathrm{O}}_{3}$, such as a first-order phase transition between the paramagnetic insulating and metallic phases that ends with a critical point, quantum p
Publikováno v:
Nanoscale
Understanding the mechanisms involved in chemical vapour deposition (CVD) synthesis of atomically thin transition metal dichalcogenides (TMDCs) requires the precise control of numerous growth parameters. All the proposed mechanisms and their relation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3004aca35f87f8a5016366a39e3cff36
http://arxiv.org/abs/1808.05036
http://arxiv.org/abs/1808.05036
Publikováno v:
Physical Review B
Light induced current in two-dimensional (2D) layered materials emerges from mechanisms such as photothermoelectric effect, photovoltaic effect or nonlocal hot carrier transport. Semiconducting layered transition metal dichalcogenides have been studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0b381bcfdb7f1a5d26dc30c7b09bf0c
https://aperta.ulakbim.gov.tr/record/32273
https://aperta.ulakbim.gov.tr/record/32273