Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 Plasma for Individual One-dimensional Ohmic Contacts to Graphene Layers

Autor: Seo, Yuta, Masubuchi, Satoru, Watanabe, Eisuke, Onodera, Momoko, Moriya, Rai, Watanabe, Kenji, Taniguchi, Takashi, Machida, Tomoki

We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increas

Externí odkaz: http://arxiv.org/abs/2012.02416

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate for fabricating edge-contact-free van der Waals heterostructures

Autor: Kinoshita, Kei, Moriya, Rai, Onodera, Momoko, Wakafuji, Yusai, Masubuchi, Satoru, Watanabe, Kenji, Taniguchi, Takashi, Machida, Tomoki

Publikováno v: This is a pre-print of an article published in npj 2D Materials and Applications 3, 22 (2019) . The final authenticated version is available online at following DOI

The dry release transfer of two-dimensional (2D) materials such as graphene, h-BN, and TMDs is a versatile method for fabricating high-quality van der Waals heterostructures. Up until now, polydimethylpolysiloxane (PDMS) sheets have been widely used

Externí odkaz: http://arxiv.org/abs/1904.12170

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2.

Autor: Islam, Md Akibul, Nicholson, Eric, Barri, Nima, Onodera, Momoko, Starkov, Danny, Serles, Peter, He, Shuo, Kumral, Boran, Zavabeti, Ali, Shahsa, Haleh, Cui, Teng, Wang, Guorui, Machida, Tomoki, Singh, C.V., Filleter, Tobin

Publikováno v: Advanced Electronic Materials; Nov2024, Vol. 10 Issue 11, p1-11, 11p