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pro vyhledávání: '"Ono Tomoya"'
Autor:
Adachi, Hayato, Endo, Ryuusuke, Shinya, Hikari, Naganuma, Hiroshi, Ono, Tomoya, Uemoto, Mitsuharu
In our previous work, we synthesized a metal/2D material heterointerface consisting of $L1_0$-ordered iron-palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and theoretical calcula
Externí odkaz:
http://arxiv.org/abs/2308.02171
Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO$_2$ interface with atomic-scale steps are carried out to investigate the effect of NO annealing. The characteristic behavior of the conduction band edge stat
Externí odkaz:
http://arxiv.org/abs/2308.00413
Valleytronics, which makes use of the two valleys in graphenes, attracts considerable attention and a valley filter is expected to be the central component in valleytronics. We propose the application of the graphene valley filter using blister defec
Externí odkaz:
http://arxiv.org/abs/2305.15726
Publikováno v:
J. Appl. Phys. 132, 155701 (2022)
We propose the atomic structures of the 4H-SiC/SiO$_2$ interface for the $a$, $m$, C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost layers of the SiC side of the interface, which agrees with the experimen
Externí odkaz:
http://arxiv.org/abs/2204.13870
Publikováno v:
Jpn. J. Appl. Phys. 61 SH1001 (2022)
The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation are investigated by first-principles calculation based on the density functional theory. T
Externí odkaz:
http://arxiv.org/abs/2202.06067
Graphene on $L1_0$-FePd(001), which has been experimentally studied in recent years, is a heterogeneous interface with a significant lattice symmetry mismatch between the honeycomb structure of graphene and tetragonal alloy surface. In this work, we
Externí odkaz:
http://arxiv.org/abs/2201.07942
Publikováno v:
In Computer Physics Communications February 2024 295
A nitridation annealing process is well employed to reduce interface trap states that degrade the channel mobility of 4H-SiC/SiO${}_2$ metal-oxide-semiconductor field-effect transistor. In recent experiments, the existence of high N-atom density laye
Externí odkaz:
http://arxiv.org/abs/2009.01627
Publikováno v:
Phys. Rev. Research 3, 013038 (2021)
We propose a first-principles method of efficiently evaluating electron-transport properties of very long systems. Implementing the recursive Green's function method and the shifted conjugate gradient method in the transport simulator based on real-s
Externí odkaz:
http://arxiv.org/abs/2005.01308
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