Výsledky vyhledávání

Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology

Autor: Erwine Pargon, Onintza Ros, Marc Fouchier, Pascal Gouraud, Sébastien Barnola

Publikováno v: Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2017, 35 (2), ⟨10.1116/1.4972228⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (2), ⟨10.1116/1.4972228⟩

The complexification of integrated circuit designs along with downscaling introduces new patterning challenges. In logic process integration, it is found that the gate etch process flow introduces a few nanometer displacement of the gate patterns fro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dad21ce3c37bc58d16ddc4aadd0a0ac9
https://hal.univ-grenoble-alpes.fr/hal-01891224

Zobrazit plný text záznamu

Patterning critical dimension control for advanced logic nodes

Publikováno v: Journal of Micro/Nanolithography, MEMS, and MOEMS. 14:021103

Patterning process control has undergone major evolutions over the last few years. Critical dimension, focus, and overlay control require deep insight into process-variability understanding to be properly apprehended. Process setup is a complex engin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d7ea7b96196431f517be1d881d144500
https://doi.org/10.1117/1.jmm.14.2.021103

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Vyhledávací nástroje:

Upřesnit hledání