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Publikováno v:
In Power Electronic Devices and Components April 2024 7
Akademický článek
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Publikováno v:
In Microelectronics Reliability November 2023 150
Publikováno v:
In Microelectronics Reliability November 2021 126
Autor:
Saito A; Department of Biochemistry, Institute of Biomedical & Health Sciences, Hiroshima University, Japan., Omura I; Department of Biochemistry, Institute of Biomedical & Health Sciences, Hiroshima University, Japan., Imaizumi K; Department of Biochemistry, Institute of Biomedical & Health Sciences, Hiroshima University, Japan.
Publikováno v:
The FEBS journal [FEBS J] 2024 Nov; Vol. 291 (22), pp. 4853-4866. Date of Electronic Publication: 2024 Jan 12.
Publikováno v:
In Microelectronics Reliability November 2020 114
Autor:
Uchida T; Department of Chemistry, Faculty of Science, Hokkaido University, Sapporo 060-0810, Japan; Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan. Electronic address: uchida@sci.hokudai.ac.jp., Umetsu S; Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan., Sasaki M; Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan., Yoshimura H; Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan., Omura I; Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan., Ishimori K; Department of Chemistry, Faculty of Science, Hokkaido University, Sapporo 060-0810, Japan; Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan.
Publikováno v:
Journal of inorganic biochemistry [J Inorg Biochem] 2025 Jan; Vol. 262, pp. 112764. Date of Electronic Publication: 2024 Oct 22.
Publikováno v:
In Microelectronics Reliability September 2019 100-101
Publikováno v:
In Microelectronics Reliability September 2019 100-101
Peak minimisation based gate delay compensation for active current balancing of parallel IGBT system
Publikováno v:
In Microelectronics Reliability September 2019 100-101