Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Omri Baum"'
Autor:
Yu Zhang, David Wei Zhang, Yuyang Bian, Biqiu Liu, Cong Zhang, Jun Huang, Jiawang Song, Yang Gao, Qiang Zhou, Wei Chen, Siqun Xiao, Shmuel Ben Nissim, Kevin Houchens, Omri Baum, Amit Zakay, Tal Ayzik, Yaniv Abramovitz
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::132931604fa8372bd4ac7cc9d438b449
https://doi.org/10.1117/1.jmm.21.4.041605
https://doi.org/10.1117/1.jmm.21.4.041605
Autor:
Yuyang Bian, Biqiu Liu, Xijun Guan, Xiaobo Guo, Cong Zhang, Wenzhan Zhou, Jun Huang, Yu Zhang, Jiawang Song, Yang Gao, Shmuel Nissim, Kevin Houchens, Omri Baum, Qiang Zhou, Zaisan Yang, Amit Zakay, Tal Ayzik, Yaniv Abramovitz
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5cda6b86bb61fe7eb7eee181d776b72
https://doi.org/10.1117/12.2614221
https://doi.org/10.1117/12.2614221
Autor:
Yu Zhang, Yuyang Bian, Yaniv Abramovitz, Yifei Zhu, Omri Baum, Alexander Vipolzov, Qiang Zhou, Biqiu Liu, Song Gao, Shmuel Ben Nissim, Cong Zhang, Uri Smolyan, Jun Huang, Xiaobo Guo
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
As technology progress with scaling to meet the market requirements, the patterning characterization of dense features suffers a significant challenge for current optic tools, and measurement accuracy will be an important index and great challenge as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7038abbb89ac80e8855e45f742b2d35
https://doi.org/10.1117/12.2585391
https://doi.org/10.1117/12.2585391
Autor:
Felix Levitov, Paz Yabbo, Brad Austin, Omri Baum, Nathaniel Mowell, Jennifer Church, DukKyun Moon, Uri Smolyan, Alex Joseph Varghese, Teresa A. Esposito, Luciana Meli
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A characterization approach has been developed for evaluating stochastic printing failures in EUV contact holes. Demand for consistent yield exceeding 10 billion contacts requires robust process co-optimization with a focus on stochastic defect reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94cd6620cec7a30ee0b9b7e357112241
https://doi.org/10.1109/asmc51741.2021.9435687
https://doi.org/10.1109/asmc51741.2021.9435687
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Stochastic effects in EUV patterning refer to random variations that impact local pattern edge fidelity. It can be caused by the lithography or etch processes. Distorted edge placement can result in larger pattern edge roughness, distorted pattern sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf953e8414063b23319b692f9ce3d5c9
https://doi.org/10.1117/12.2514877
https://doi.org/10.1117/12.2514877