Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Omor F. Shoron"'
Autor:
Zhanbo Xia, Nidhin Kurian Kalarickal, Caiyu Wang, Hao Yang, Christopher R. Freeze, Siddharth Rajan, Susanne Stemmer, Omor F. Shoron, Nick Combs, Junao Cheng, Wu Lu
Publikováno v:
IEEE Electron Device Letters. 41:621-624
High-current molecular beam epitaxial perovskite oxide semiconductor BaTiO3/BaSnO3 heterostructure field effect transistors on SrTiO3 substrates were developed. Record high current density of $\text{I}_{{\mathrm{max}}} =406.7$ mA/mm, maximum transcon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3eb68ac0eda50bf41b2578ef88c85c0
https://doi.org/10.1109/led.2020.2976456
https://doi.org/10.1109/led.2020.2976456
Autor:
Timo Schumann, Manik Goyal, Omor F. Shoron, Susanne Stemmer, David A. Kealhofer, Anton Burkov
Publikováno v:
Applied Physics Letters. 119:171907
Topological protection against localization causes electrical transport phenomena in disordered topological materials to differ from those in topologically trivial systems. For example, a transition between a regime of weak localization to one of wea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2988bc74021ed6c0dfae6bb302bf2ecb
https://doi.org/10.1063/5.0066252
https://doi.org/10.1063/5.0066252
Publikováno v:
DRC
Recent development of topological materials has opened up a new paradigm of material research. Unique electronics properties make these materials interesting to study new physics of materials. Thin film epitaxial growth gives an additional control pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b13d943bc804ea9d74ea52e05117628
https://doi.org/10.1109/drc46940.2019.9046442
https://doi.org/10.1109/drc46940.2019.9046442
Publikováno v:
Advanced Electronic Materials. 6:2000676
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec98c6ca6d77980607688df714bf9818
https://doi.org/10.1002/aelm.202000676
https://doi.org/10.1002/aelm.202000676
Autor:
Luca Galletti, Omor F. Shoron, Susanne Stemmer, Timo Schumann, David A. Kealhofer, Honggyu Kim, Manik Goyal
Publikováno v:
Physical Review B. 97
Three-dimensional topological Dirac semimetals are a new state of matter. The authors report on experiments that directly access the electronic structure of two-dimensional states in the prototype topological Dirac semimetal Cd${}_{3}$As${}_{2}$. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96aabe0f48c01d6bdf38386bbac9c841
https://doi.org/10.1103/physrevb.97.115132
https://doi.org/10.1103/physrevb.97.115132
Autor:
Junao Cheng, Chris Freeze, Siddharth Rajan, Susanne Stemmer, Hareesh Chandrasekar, Hao Yang, Nick Combs, Caiyu Wang, Wu Lu, Omor F. Shoron, Nidhin Kurian Kalarickal, Wangzhou Wu
Publikováno v:
Journal of Vacuum Science & Technology B. 38:012201
The etching of epitaxially grown perovskite oxide BaSnO3 (BSO) and BaTiO3 (BTO) thin films is studied using Cl-based (BCl3/Ar) and F-based (CF4/Ar) plasma chemistries in an inductively coupled plasma reactive ion etching (ICP-RIE) system for the deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01a591c90e77fc52de8581790cbd6e19
https://doi.org/10.1116/1.5122667
https://doi.org/10.1116/1.5122667
Publikováno v:
Applied Physics Letters, vol 115, iss 6
Cadmium arsenide (Cd3As2) is a three-dimensional Dirac semimetal with many unique electronic properties that are of interest for future device applications. Here, we demonstrate field effect transistors using Cd3As2 as the channel material. We show t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cad53a9bf10a94003173f86437ab5957
https://doi.org/10.1063/1.5103268
https://doi.org/10.1063/1.5103268
Publikováno v:
Microscopy and Microanalysis. 23:1578-1579
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dab80c989d99f8d1197d8dffbfeb1ea
https://doi.org/10.1017/s1431927617008558
https://doi.org/10.1017/s1431927617008558
Publikováno v:
ECS Transactions. 35:363-373
Band to band tunneling current of strained InxGa1-xAs (x=0.47,0.65, 0.75) surface channel double gate TFET has been calculated using a simple numerical model. This proposed model provides reasonably accurate result for planner TFETs in low voltage (b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::452112b9f3c8d2b85d6d9e2fb76b86b1
https://doi.org/10.1149/1.3569929
https://doi.org/10.1149/1.3569929
Publikováno v:
Applied Physics Letters. 110:232902
Integration of ultrathin ferroelectric thin films with semiconductors is of interest for negative capacitance transistors that exhibit internal voltage gain, which may allow for scaling the supply voltage of low power circuits. In this study, BaTiO3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf73358180232985b4f8cd8668df1f7
https://doi.org/10.1063/1.4985014
https://doi.org/10.1063/1.4985014