Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Omkaram Inturu"'
Autor:
Inturu Sreelatha, Ga-Young Choi, In-Seo Lee, Omkaram Inturu, Hyun-Sook Lee, Yea-Na Park, Cheol-Won Lee, Inkyou Yang, Sungho Maeng, Ji-Ho Park
Publikováno v:
Neurology International, Vol 16, Iss 5, Pp 1094-1111 (2024)
Background/Objectives: Alzheimer’s disease (AD) is an age-related degenerative brain disorder characterized by a progressive decline in cognitive function and memory. This study aimed to evaluate whether rutin hydrate (RH) has neuroprotective effec
Externí odkaz:
https://doaj.org/article/4e39945866864ee0a7e7ea5fb5dcde96
Publikováno v:
RSC Advances. 9:4190-4197
Bi2Te3-based compounds have received attention as thermoelectric materials for room-temperature cooling and waste heat recovery applications. With potential application prospects, quaternary compounds of Bi2Te3–Bi2Se3–Bi2S3 composites can be used
Autor:
Kaleemulla Shaik, Madhusudhana Rao Nasina, Sreekantha Reddy Dugasani, Omkaram Inturu, Balaraju Bayyappagari
Publikováno v:
Optik. 154:821-827
Pure and iron doped cerium oxide nanoparticles (Ce1-xFexO2) at x = 0.00, 0.01, 0.03 and 0.05 were synthesised using ball milling method and subjected to their microstructural, optical and magnetic properties. Face centred cubic structure was found fo
Autor:
Sungho Lee, Na Liu, Omkaram Inturu, Sunkook Kim, Do Hyeong Kim, Seung-Jun Kwon, Hanseung Lee, Healin Im, Yunsu Lee
Publikováno v:
Construction and Building Materials. 156:506-514
In this paper, an embedded ultrathin-film iron (Fe) corrosion sensor passivated with an anion-exchange membrane is developed to reveal the extent of corrosion tendency in reinforced concrete. Rebar in reinforced concrete is mainly corroded due to pen
Publikováno v:
AIP Conference Proceedings; 2020, Vol. 2221 Issue 1, p110001-1-110001-6, 6p, 5 Graphs
Publikováno v:
RSC advances. 9(8)
Bi
Publikováno v:
Journal of the Korean Physical Society. 64:945-948
This paper reports the high-temperature-dependent electrical behavior of a 2D multilayer MoS2 transistor. The existence of a big Schottky barrier at the MoS2-Ti junction can reduce carrier transport and lead to a lower transistor conductance. At a hi
Akademický článek
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Akademický článek
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Autor:
Kim, Sunkook, Maassen, Jesse, Lee, Jiyoul, Kim, Seung Min, Han, Gyuchull, Kwon, Junyeon, Hong, Seongin, Park, Jozeph, Liu, Na, Park, Yun Chang, Omkaram, Inturu, Rhyee, Jong‐Soo, Hong, Young Ki, Yoon, Youngki
Publikováno v:
Advanced Materials; Mar2018, Vol. 30 Issue 12, p1-1, 9p