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pro vyhledávání: '"Omer Ahmet Kayal"'
Autor:
Gokhan Kurt, Melisa Ekin Gulseren, Gurur Salkim, Sertac Ural, Omer Ahmet Kayal, Mustafa Ozturk, Bayram Butun, Mehmet Kabak, Ekmel Ozbay
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment du
Externí odkaz:
https://doaj.org/article/5f220c2dc96e4d1191d32b2a27c4b853
