Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Omar Chihani"'
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2018, 88-90, pp.402-405. ⟨10.1016/j.microrel.2018.07.076⟩
Microelectronics Reliability, Elsevier, 2018, 88-90, pp.402-405. ⟨10.1016/j.microrel.2018.07.076⟩
Space and transport industries are facing a strong global competition which is setting economic constraints on the entire supply chain. In order to address decreasing development costs and to propose new features, components-off-the-shelf (COTS) have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::decad739c954f3e8a2b2d2bab41abbce
https://hal.archives-ouvertes.fr/hal-02499971
https://hal.archives-ouvertes.fr/hal-02499971
Autor:
Omar Chihani, Loic Theolier, Jean-Yves Deletage, Eric Woirgard, Alain Bensoussan, Andre Durier
Publikováno v:
2018 IEEE International Reliability Physics Symposium (IRPS)
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, San-Francisco, United States. pp.P-RT.2-1-P-RT.2-6, ⟨10.1109/irps.2018.8353685⟩
IRPS
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, San-Francisco, United States. pp.P-RT.2-1-P-RT.2-6, ⟨10.1109/irps.2018.8353685⟩
IRPS
This paper investigates the degradation of AlGaN/GaN HEMTs submitted to HTRB and HTGB step-stresses. Steps in terms of temperature and voltage were performed in order to distinguish the effect of each stressor. The main aim is to establish a lifetime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3153c1bac81d540210b5351f7910ef14
https://hal.archives-ouvertes.fr/hal-02500021
https://hal.archives-ouvertes.fr/hal-02500021
Autor:
Omar Chihani, Loïc Théolier, Alain Bensoussan, Pierre Bondue, Jean-Yves Deletage, André Durier, Eric Woirgard
Publikováno v:
Symposium de Génie Electrique
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
HAL
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
HAL
International audience; Des vieillissements par palier de type HTRB et HTGB ont été menés sur des transistors HEMTs de puissance en GaN. Des variations de tension ou de température ont été effectuées afin de mieux comprendre l'effet de chaque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::dcf56e237d64a815fa23e691688bcda6
https://hal.archives-ouvertes.fr/hal-02981877
https://hal.archives-ouvertes.fr/hal-02981877