Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Omar Abbes"'
Autor:
Minh-Tuan Dau, Vinh Le Thanh, Lisa A Michez, Matthieu Petit, Thi-Giang Le, Omar Abbes, Aurélie Spiesser, Alain Ranguis
Publikováno v:
New Journal of Physics, Vol 14, Iss 10, p 103020 (2012)
The Mn _5 Ge _3 compound, thanks to its room-temperature ferromagnetism, metallic character and ability to epitaxially grow on germanium, acts as a potential candidate for spin injection into group-IV semiconductors. Understanding and controlling Ge
Externí odkaz:
https://doaj.org/article/1d82f59199da485d99fba21db659fa9b
Autor:
Mohamed-Amine Guerboukha, Matthieu Petit, Aurélie Spiesser, Alain Portavoce, Omar Abbes, Vasile Heresanu, Sylvain Bertaina, Cyril Coudreau, Lisa Michez
Publikováno v:
Thin Solid Films
Thin Solid Films, 2022, 761, pp.139523. ⟨10.1016/j.tsf.2022.139523⟩
Thin Solid Films, 2022, 761, pp.139523. ⟨10.1016/j.tsf.2022.139523⟩
International audience; We have studied the stability of manganese germanide thin films grown on Ge(111) substrates by three different growth methods: solid phase epitaxy, reactive deposition epitaxy and co-deposition. By combining X-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e6d229668a3bdfeb5800a77d0277ab3
https://doi.org/10.1016/j.tsf.2022.139523
https://doi.org/10.1016/j.tsf.2022.139523
Autor:
Vinh Le Thanh, Alain Portavoce, Lee Chow, Yauheni Rudzevich, Omar Abbes, Lisa Michez, Christophe Girardeaux, Sylvain Bertaina
Publikováno v:
Defect and Diffusion Forum
Defect and Diffusion Forum, 2015, 363, pp.56-61. ⟨10.4028/www.scientific.net/DDF.363.56⟩
Defect and Diffusion Forum, Trans Tech Publications, 2015, 363, pp.56-61. ⟨10.4028/www.scientific.net/DDF.363.56⟩
Defect and Diffusion Forum, 2015, 363, pp.56-61. ⟨10.4028/www.scientific.net/DDF.363.56⟩
Defect and Diffusion Forum, Trans Tech Publications, 2015, 363, pp.56-61. ⟨10.4028/www.scientific.net/DDF.363.56⟩
In this paper, we report investigations concerning the fabrication of a diluted Ge (Mn) solution using solid state Mn diffusion, and Mn/Ge reactive diffusion for spintronic applications. The study of Mn diffusion shows that the quasi-totality of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58a1065b44b38a785dc10b444b4d9886
https://doi.org/10.4028/www.scientific.net/ddf.363.56
https://doi.org/10.4028/www.scientific.net/ddf.363.56
Publikováno v:
Advanced Materials Letters
Advanced Materials Letters, 2017, 8 (5), pp.600-604
Advanced Materials Letters, VBRI Press, 2017, 8 (5), pp.600-604
Advanced Materials Letters, 2017, 8 (5), pp.600-604. ⟨10.5185/amlett.2017.6908⟩
Advanced Materials Letters, 2017, 8 (5), pp.600-604
Advanced Materials Letters, VBRI Press, 2017, 8 (5), pp.600-604
Advanced Materials Letters, 2017, 8 (5), pp.600-604. ⟨10.5185/amlett.2017.6908⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::213e4174f6782fc310c70fafae61152c
https://hal-amu.archives-ouvertes.fr/hal-02044820
https://hal-amu.archives-ouvertes.fr/hal-02044820
Publikováno v:
Thin Solid Films. 542:174-179
In situ experiments based on X-ray diffraction, sheet resistance and differential scanning calorimetry were performed on Pt thin films deposited on Si either undoped or doped with As (n type) or B (p type). In all cases, these measurements show a seq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2f1de78b04ea658f5945d710a0fd69
https://doi.org/10.1016/j.tsf.2013.07.023
https://doi.org/10.1016/j.tsf.2013.07.023
Publikováno v:
Advanced Materials
Advanced Materials, Wiley-VCH Verlag, 2015, ⟨10.5185/amlett.2015.6138⟩
Advanced Materials, 2015, ⟨10.5185/amlett.2015.6138⟩
Advanced Materials, Wiley-VCH Verlag, 2015, ⟨10.5185/amlett.2015.6138⟩
Advanced Materials, 2015, ⟨10.5185/amlett.2015.6138⟩
International audience; This communication describes the development of optimized metallic contacts on Si for thermoelectric applications. Thin solid films of Ni and Pt with the same thickness, were deposited on Si substrates. Two silicides were form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3f37541de77f8695c472aa83deedf49
https://hal.archives-ouvertes.fr/hal-01226057
https://hal.archives-ouvertes.fr/hal-01226057
Autor:
V. Le Thanh, Aurélie Spiesser, Lisa Michez, Omar Abbes, Christophe Girardeaux, Alain Portavoce
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2015, 100, pp.70-73. ⟨10.1016/j.scriptamat.2014.12.016⟩
Scripta Materialia, 2015, 100, pp.70-73. ⟨10.1016/j.scriptamat.2014.12.016⟩
Scripta Materialia, Elsevier, 2015, 100, pp.70-73. ⟨10.1016/j.scriptamat.2014.12.016⟩
Scripta Materialia, 2015, 100, pp.70-73. ⟨10.1016/j.scriptamat.2014.12.016⟩
The possible fabrication of spintronic devices based on the Mn–Ge binary system supports extensive investigations on the magnetic properties of Mn–Ge structures. However, the global magnetic signal of a given sample is sometime complex due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f3359dd411b3abc441148557cb94276
https://hal-amu.archives-ouvertes.fr/hal-02385317
https://hal-amu.archives-ouvertes.fr/hal-02385317
Publikováno v:
Materials Letters
Materials Letters, Elsevier, 2014, 119, pp.68-70
Materials Letters, 2014, 119, pp.68-70. ⟨10.1016/j.matlet.2014.01.021⟩
Materials Letters, Elsevier, 2014, 119, pp.68-70. ⟨10.1016/j.matlet.2014.01.021⟩
Materials Letters, Elsevier, 2014, 119, pp.68-70
Materials Letters, 2014, 119, pp.68-70. ⟨10.1016/j.matlet.2014.01.021⟩
Materials Letters, Elsevier, 2014, 119, pp.68-70. ⟨10.1016/j.matlet.2014.01.021⟩
Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eee4605de7afde60eed81de9edc1f1b2
https://hal.archives-ouvertes.fr/hal-00975159
https://hal.archives-ouvertes.fr/hal-00975159
Autor:
M. El Kurdi, Philippe Boucaud, T. K. P. Luong, M.A. Zrir, Omar Abbes, Matthieu Petit, Vasile Heresanu, Thi-Giang Le, Rachid Daineche, J. Murota, Mathieu Stoffel, M. T. Dau, Hervé Rinnert, V. Le Thanh, A. Ghrib
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2014, 557, pp.70-75. ⟨10.1016/j.tsf.2013.11.027⟩
Thin Solid Films, 2014, 557, pp.70-75. ⟨10.1016/j.tsf.2013.11.027⟩
Thin Solid Films, Elsevier, 2014, 557, pp.70-75. ⟨10.1016/j.tsf.2013.11.027⟩
Thin Solid Films, 2014, 557, pp.70-75. ⟨10.1016/j.tsf.2013.11.027⟩
We have combined numerous characterization techniques to investigate the growth of tensile-strained and n -doped Ge films on Si(001) substrates by means of solid-source molecular-beam epitaxy. The Ge growth was carried out using a two-step growth met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37b68eb0c79c4cea708931121b808c14
https://hal.archives-ouvertes.fr/hal-00975160
https://hal.archives-ouvertes.fr/hal-00975160
Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2013, 103, pp.172405
Applied Physics Letters, American Institute of Physics, 2013, 103, pp.172405
Applied Physics Letters, American Institute of Physics, 2013, 103 (17), pp.172405. ⟨10.1063/1.4827100⟩
Applied Physics Letters, 2013, 103 (17), pp.172405
Applied Physics Letters, American Institute of Physics, 2013, 103 (17), pp.172405
Applied Physics Letters, 2013, 103 (17), pp.172405. ⟨10.1063/1.4827100⟩
Applied Physics Letters, 2013, 103, pp.172405
Applied Physics Letters, American Institute of Physics, 2013, 103, pp.172405
Applied Physics Letters, American Institute of Physics, 2013, 103 (17), pp.172405. ⟨10.1063/1.4827100⟩
Applied Physics Letters, 2013, 103 (17), pp.172405
Applied Physics Letters, American Institute of Physics, 2013, 103 (17), pp.172405
Applied Physics Letters, 2013, 103 (17), pp.172405. ⟨10.1063/1.4827100⟩
Interesting results have been reported concerning the magnetic properties of the Mn5Ge3 compound, opening the road to possibly create spin injectors in Ge. However, a process compatible with the Complementary Metal Oxide Semiconductor technology, all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::883dc907960a45ad7ac7d73f01f3c097
https://hal.science/hal-00914754
https://hal.science/hal-00914754