Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Omar A. Abdulrazaq"'
Autor:
Andrii Zapryvoda, Qasim Subhie Ali, Omar Abdulhusien Abdulrazaq, Azhar Raheem Mohammed Al-Ani, Aseel Khalid Ahmed, Ibrahim Abdullah
Publikováno v:
Proceedings of the XXth Conference of Open Innovations Association FRUCT, Vol 36, Iss 1, Pp 756-767 (2024)
Background: 5G, when combined with immersive virtual reality (VR) technology, can create a trillion dollar innovation ecosystem across industries from education and healthcare to entertainment. The article studies what impact and implications did thi
Externí odkaz:
https://doaj.org/article/bbd094b9c121469988815292744e196e
Publikováno v:
Journal of Engineering and Sustainable Development, Vol 13, Iss 2 (2009)
Ductile cast iron is considered to be a recent member of the cast iron family. Because of the high cost spent in producing ferritic ductile iron using heat treatment for a long period of time. This work presents a brief picture of to assess railway s
Externí odkaz:
https://doaj.org/article/91c03039359f49a8a823ecc2e3882d4a
Publikováno v:
Military Medical Science Letters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cf18b9410305bf384f6dff1ab116982
https://doi.org/10.31482/mmsl.2022.053
https://doi.org/10.31482/mmsl.2022.053
Autor:
Omar A. Abdulrazaq, Alwan M. Alwan
Publikováno v:
International Journal of Modern Physics B. 22:417-422
The photoluminescence spectrum of the freshly photosynthesized porous silicon (PS) has been investigated. This measurement was repeated after three and six months for the same sample after storage under ambient condition (open air at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47aafb301d65038edacec3ce78f937d8
https://doi.org/10.1142/s0217979208038594
https://doi.org/10.1142/s0217979208038594
Autor:
Omar A. Abdulrazaq, Raid A. Ismail
Publikováno v:
Solar Energy Materials and Solar Cells. 91:903-907
CdO/c-Si solar cells have been made by depositing CdO thin films on p-type monocrystalline silicon substrate by means of the rapid thermal oxidation (RTO) technique using a halogen lamp at 350 °C/45 s in static air. Results on structural, optical, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ccca3d0ff6653316bef6ff21a82f6dd
https://doi.org/10.1016/j.solmat.2007.02.006
https://doi.org/10.1016/j.solmat.2007.02.006
Publikováno v:
Materials Science in Semiconductor Processing. 10:19-23
The present study is on the optoelectronic properties of isotype CdTe/c-Si heterojunction photodetector made by deposition of CdTe by pulsed laser deposition (PLD) technique on clean monocrystalline Si. Optical, electrical and structural properties o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25db659f4f29690bc7f2489a2d3a46be
https://doi.org/10.1016/j.mssp.2006.12.001
https://doi.org/10.1016/j.mssp.2006.12.001
Publikováno v:
Modern Physics Letters B. 20:1833-1838
Near-ideal p-CdS/n-Si heterojunction (HJ) band edge lineup has been investigated for the first time with the aid of I–V and C–V measurements. The heterojunction was obtained by the deposition of CdS films prepared by chemical spray pyrolysis tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::471b7b26b215dbdf1f036aeef6a444df
https://doi.org/10.1142/s0217984906012158
https://doi.org/10.1142/s0217984906012158
Publikováno v:
Journal of Materials Science: Materials in Electronics. 17:643-646
Isotype and anisotype heterojunction Ge/Si photodetectors have been made by depositing Ge layer onto monocrystalline Si using vacuum evaporation technique. These detectors before and after annealing were utilized to detect 1.064 µm Nd:YAG laser puls
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a87e1cfa19926850406d49ee76f8809
https://doi.org/10.1007/s10854-006-0012-5
https://doi.org/10.1007/s10854-006-0012-5
Publikováno v:
International Journal of Modern Physics B. 19:4619-4628
In this paper, we report the experimental data of photoresponse, namely, voltage responsivity and speed of response at λ=904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac51ae2bae6149b11f71aef8e068002
https://doi.org/10.1142/s0217979205032978
https://doi.org/10.1142/s0217979205032978
Publikováno v:
Surface Review and Letters. 12:515-518
Conductive transparent In 2 O 3 thin films with (222)-preferred orientation were prepared by rapid thermal oxidation (RTO) in static air of indium thin films at condition 200°C/30 s. Detailed structural, electrical, and optical characteristics of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350730404dc9035b9138c7c27db7321d
https://doi.org/10.1142/s0218625x05007359
https://doi.org/10.1142/s0218625x05007359