Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Omair I. Saadat"'
Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry
Publikováno v:
Bagnall
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing next generation high-power RF amplifiers and high-efficiency power converters. However, elevated channel temperatures due to self-heating often severe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06dccb6ca43052760fdadd19d41135bd
https://orcid.org/0000-0003-3081-6425
https://orcid.org/0000-0003-3081-6425
Autor:
Tomas Palacios, Xiao Sun, Sharon Cui, Daniel M. Fleetwood, T. P. Ma, E. Xia Zhang, Omair I. Saadat, Jin Chen
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4074-4079
We have investigated the total ionizing dose (TID) radiation effects in AlGaN/GaN MOS-HEMTs as a function of dose and radiation bias, and compared them with conventional HEMTs. Under 10 keV X-ray irradiation, two distinct regimes of threshold voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ca1e1bfa45918642d551997e273357
https://doi.org/10.1109/tns.2013.2278314
https://doi.org/10.1109/tns.2013.2278314
Publikováno v:
physica status solidi c. 6:1361-1364
After forty years following Moore's law, Si digital electronics is reaching its limits, both in performance and in economic viability. In this paper we describe how nitride semiconductors can be combined with Si electronics to allow electronics to mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7f07726e77e1bf156f1fc4a4461f34e
https://doi.org/10.1002/pssc.200881534
https://doi.org/10.1002/pssc.200881534
Autor:
Feng Gao, Daniel Piedra, Mohamed Azize, Bin Lu, Tomas Palacios, Elison Matioli, Ling Xia, Min Sun, Yuhao Zhang, J. W. Chung, Omair I. Saadat
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
It is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b57b8f09860e3a5c58fe7d8fe2546cbe
https://doi.org/10.1109/iedm.2015.7409713
https://doi.org/10.1109/iedm.2015.7409713
Autor:
Allen Hsu, Mohamed Azize, Omair I. Saadat, Matthew J. Smith, Silvija Gradečak, Tomas Palacios, Xiang Gao, Shiping Guo
Publikováno v:
IEEE Electron Device Letters. 32:1680-1682
We demonstrate high-electron-mobility transistors (HEMTs) based on InAlN/GaN nanoribbon (NR) structures. These devices, with NR widths d in the 50-90 nm range, are fabricated through a top-down technology on planar InAlN/GaN samples grown on a SiC su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fffb4f57dfcc9bbc8a970c35c73a3f66
https://doi.org/10.1109/led.2011.2170149
https://doi.org/10.1109/led.2011.2170149
Publikováno v:
Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
Although wide bandgap solid state devices are one of the most promising technologies for high power, high frequency applications, high device temperatures often lead to degraded performance and reliability. Thus, accurately predicting and maintaining
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd171680f13ce20b60a0bdbdec75ec3c
https://doi.org/10.1109/itherm.2014.6892384
https://doi.org/10.1109/itherm.2014.6892384
Publikováno v:
IEEE Electron Device Letters. 31:990-992
In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage. The device utili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e96e9a592fa39ee629308a27f77ccd8
https://doi.org/10.1109/led.2010.2055825
https://doi.org/10.1109/led.2010.2055825
Publikováno v:
IEEE Electron Device Letters. 30:1254-1256
This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and it is optimized to stand the 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eab74a519aab28bf62073e96d4a4ddf
https://doi.org/10.1109/led.2009.2032938
https://doi.org/10.1109/led.2009.2032938
Publikováno v:
IEEE Electron Device Letters. 30:904-906
We studied submicrometer (LG = 0.15-0.25 ?m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dbd61c071225658dba1d9fe9530e69a
https://doi.org/10.1109/led.2009.2026718
https://doi.org/10.1109/led.2009.2026718
Autor:
Tomas Palacios, Omair I. Saadat
Publikováno v:
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).
Gate dielectrics are of great interest in AlGaN/GaN transistors to increase the I on /I off ratios and to reduce gate leakage. However, integrating gate dielectrics with recessed gates require low temperature dielectric depositions where the gate pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5748481cd0667f90da4031de0a04a1cd
https://doi.org/10.1109/essderc.2011.6044178
https://doi.org/10.1109/essderc.2011.6044178