Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Om Prakash Das"'
Autor:
null Resmi K. R., Shijo M. Joseph, null Raju G., Debabrata Swain, Om Prakash Das, Biswaranjan Acharya
Publikováno v:
International Journal of Online and Biomedical Engineering (iJOE). 19:127-143
An individual's authentication plays a vital role in our daily life. In the last decade, biometric-based authentication has become more prevalent than traditional approaches like passwords and pins. Ear recognition has gained attention in the biometr
Autor:
Om Prakash Das, Shivendra Kumar Pandey
Publikováno v:
ACS Applied Electronic Materials. 5:327-334
Autor:
Farha Fatina Wahid, Raju G, Shijo M. Joseph, Debabrata Swain, Om Prakash Das, Biswaranjan Acharya
Publikováno v:
Journal of Advances in Information Technology. 14:185-192
Publikováno v:
2022 6th International Conference on Devices, Circuits and Systems (ICDCS).
Autor:
Om Prakash Das, Shivendra Kumar Pandey
Publikováno v:
Journal of Physics: Conference Series. 2426:012031
The bipolar switching phenomenon is observed in the MgO-based memory cell having a metal-oxide-metal (W/MgO/Cu) structure. The MgO thin film offers a high transmittance of 86 - 88% for visible light, measured by UV-Visible spectroscopy. An optical ba
Autor:
SHIVENDRA KUMAR PANDEY, Om Prakash Das
Publikováno v:
physica status solidi (b). 259:2200103
Autor:
Shivendra Kumar Pandey, Om Prakash Das
Publikováno v:
iSES
To achieve the current-day demand for data storage, resistive random access memory (ReRAM) is an emerging candidate in non-volatile memory (NVM) segment. The switching of ReRAM device deals with SET and RESET states where formation and dissolution of
Publikováno v:
SSRN Electronic Journal.
To satisfy the increasing demand for power and reducing CO2 emission, the future generation system must meet the demand, reliability, efficiency and sustainability. This has increased the generation of power by using solar, wind, tidal, and many more
Autor:
Shivendra Kumar Pandey, Om Prakash Das
Publikováno v:
Semiconductor Science and Technology. 36:095039
The formation and disruption of conducting filament (CF) are responsible for the SET/RESET switching of resistive random access memory (ReRAM). The ReRAM enters into a low resistive state (LRS) soon after the complete formation of CF and the process
Autor:
Om Prakash Das, Taher El Gezeery, Adel Ebaid, Tahani Al Rashidi, Girija Shankar Padhy, Rabie S Noueihed, Jeevan Kumar, Jhonatan Pazos, Nasser Al Shemali, Cahyo Nugroho
Publikováno v:
Day 3 Wed, November 15, 2017.
The Middle Cretaceous Burgan reservoir in Minagish Field exhibits variable depositional clastic settings ranging from "Fluvial", "Fluvio-tidaT to "tidal wave sands". The sand bodies of Upper Burgan reservoir are highly heterogeneous in terms of the s