Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Om Kumar Prasad"'
Autor:
Om Prasad, Om Kumar Prasad
103
In this thesis, various Cobalt doped Zinc oxide (Co: ZnO) thin film as a resistive switching layer for transparent resistive switching random access memory (T-RRAM) devices was investigated. The influence of Co doping concentrations (0, 2 an
In this thesis, various Cobalt doped Zinc oxide (Co: ZnO) thin film as a resistive switching layer for transparent resistive switching random access memory (T-RRAM) devices was investigated. The influence of Co doping concentrations (0, 2 an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/84615410656940555687
Autor:
Kow-ming Chang, Jia-Chuan Lin, Poshan Kumar Reddy, Om Kumar Prasad, Chien-Hung Wu, Srikant Kumar Mohanty
Publikováno v:
IEEE Electron Device Letters. 42:1770-1773
Gradual conduction tuning with a large memory window is essential for realizing multilevel switching memristive devices. In this work, we demonstrated 3-bit per cell storage capability with excellent endurance and retention behavior of AlN/AlO memris
Publikováno v:
Nanotechnology. 32(39)
This work investigates the effect of an
Publikováno v:
Nanotechnology. 32:395203
This work investigates the effect of an in situ hydrogen plasma treatment on gate bias stability and performance of amorphous InGaZnO thin-film transistors (TFTs) deposited by using atmospheric-pressure PECVD. The H2 plasma-treated a-IGZO channel has
Autor:
Firman Mangasa Simanjuntak, Themis Prodromakis, Tseung-Yuen Tseng, Sridhar Chandrasekaran, Om Kumar Prasad, Femiana Gapsari
Publikováno v:
IOP Conference Series: Materials Science and Engineering
The Co dopant substitutes the Zn atomic position in the hexagonal crystal lattice and generates acceptor defects. These defects play significant role in modulating the conduction mechanism of the memristive device. The devices without Co dopant have
Autor:
Eric-Juwei Cheng, Deepak Puthal, Po-Hao Chin, Nabin Sharma, Om Kumar Prasad, Chin-Teng Lin, Michael Blumenstein, Mukesh Prasad
Publikováno v:
Neural Information Processing ISBN: 9783319700892
ICONIP (3)
ICONIP (3)
Feature extraction is an essential step in solving real-world pattern recognition and classification problems. The accuracy of face recognition highly depends on the extracted features to represent a face. The traditional algorithms uses geometric te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34e945ba7e09c06385acec6242b33c59
https://doi.org/10.1007/978-3-319-70090-8_67
https://doi.org/10.1007/978-3-319-70090-8_67
© 2016, Taiwan Fuzzy Systems Association and Springer-Verlag Berlin Heidelberg. In this paper, a novel fuzzy logic-based expansion approach considering the relevance score produced by different rank aggregation approaches is proposed. It is well kno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7f43046bc7f191e4c3f19adb4c0c8a3
https://hdl.handle.net/10453/113453
https://hdl.handle.net/10453/113453
Novel Data Knowledge Representation with TSK-Type Preprocessed Collaborative Fuzzy Rule Based System
Autor:
Manoranjan Mohanty, Jagendra Singh, Chin-Teng Lin, Mukesh Prasad, Meng Joo Er, Om Kumar Prasad
Publikováno v:
SSCI
A novel data knowledge representation with the combination of structure learning ability of preprocessed collaborative fuzzy clustering and fuzzy expert knowledge of Takagi-Sugeno-Kang type model is presented in this paper. The proposed method divide
© 2015 Elsevier B.V. In this paper, a novel fuzzy rule transfer mechanism for self-constructing neural fuzzy inference networks is being proposed. The features of the proposed method, termed data-driven neural fuzzy system with collaborative fuzzy c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f4a94f0e3074d16ab3233f036ddfef3
https://hdl.handle.net/10453/113516
https://hdl.handle.net/10453/113516
Autor:
Chun An Lin, Tsung Ling Tsai, Om Kumar Prasad, Tseung-Yuen Tseng, Kung-Hwa Wei, Firman Mangasa Simanjuntak, Debashis Panda
Publikováno v:
Applied Physics Letters. 108:183506
The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switchin