Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Om Jaiswal"'
Autor:
Jitesh Gadgilwar, Kunal Rahangdale, Om Jaiswal, Parag Asare, Pratik Adekar, Prof. Leela Bitla
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 11:1491-1495
Deep learning, integrated with Artificial Intelligence algorithms, has brought about numerous beneficial practical technologies. However, it also brings up a problem that the world is facing today. Despite its innumerable suitable applications, it po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2213d1813b4204034843d23ac6ae83
https://doi.org/10.22214/ijraset.2023.49681
https://doi.org/10.22214/ijraset.2023.49681
Autor:
Nathalie Casati, Maria Gabrani, Ramya Viswanathan, Amr Abdo, Josef S. Watts, James M. Oberschmidt, Om Jaiswal
Publikováno v:
SPIE Proceedings.
OPC models have become critical in the manufacturing of integrated circuits (ICs) by allowing correction of complex designs, as we approach the physical limits of scaling in IC chip design. The accuracy of these models depends upon the ability of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1948320d490606f04a208f0b1f1b3dd9
https://doi.org/10.1117/12.2086049
https://doi.org/10.1117/12.2086049
Autor:
Maria Gabrani, Ramya Viswanathan, James M. Oberschmidt, Zikri Bayraktar, Om Jaiswal, Nathalie Casati, Andreas Krause, Amr Abdo, David L. DeMaris
Publikováno v:
SPIE Proceedings.
It is desired to reduce the time required to produce metrology data for calibration of Optical Proximity Correction (OPC) models and also maintain or improve the quality of the data collected with regard to how well that data represents the types of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4687726e924d4d1a9612557e4654f1
https://doi.org/10.1117/12.2045461
https://doi.org/10.1117/12.2045461
Autor:
Aditya Padmawar, Tamer Desouky, Samit Barai, Ramana Murthy Pusuluri, James M. Oberschmidt, Om Jaiswal
Publikováno v:
SPIE Proceedings.
Process models have been in use for performing proximity corrections to designs for placement on lithography masks for a number of years. In order for these models to be used they must provide an adequate representation of the process while also allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2f88fd5057e6e61719a0ecc9cd61105
https://doi.org/10.1117/12.897531
https://doi.org/10.1117/12.897531