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pro vyhledávání: '"Olufemi Oluseye Kehinde"'
Autor:
Frederick Ojiemhende Ehiagwina, Olufemi Oluseye Kehinde, Lateef Olashile Afolabi, Hassan Jimoh Onawola, Nurudeen Ajibola Iromini
Publikováno v:
International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems, Vol 5, Iss 3, Pp 133-141 (2016)
Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for man
Externí odkaz:
https://doaj.org/article/13c0855ec7424eabab56bfe2076e8292
Autor:
Olufemi Oluseye Kehinde, O. E. Seluwa, A. A. Adewale, J. J. Anifowose, Frederick Ojiemhende Ehiagwina
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1107:012032
Data traffic and the number of mobile subscribers have increased significantly prompting cellular network operators to install additional mobile cellular base stations (BSs) to meet the increasing demand. This proliferation of BSs has resulted in con
Autor:
Olufemi Oluseye Kehinde, Nurudeen Ajibola Iromini, Lateef Olashile Afolabi, Frederick Ojiemhende Ehiagwina, Hassan Jimoh Onawola
Publikováno v:
International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems, Vol 5, Iss 3, Pp 133-141 (2016)
Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for man