Ising model with a magnetic field

Autor: Meissner, K. A., Ircha, D., Olszewski, W., Ruta, J, Słapek, A.

The paper presents the low temperature expansion of the 2D Ising model in the presence of the magnetic field in powers of $x=\exp(-J/(kT))$ and $z=\exp(B/(kT))$ with full polynomials in $z$ up to $x^{88}$ and full polynomials in $x^4$ up to $z^{-60}$

Externí odkaz: http://arxiv.org/abs/2303.12453

M\'ossbauer measurements of GaFeO$_3$ single crystal multiferroic

Autor: Szymański, K., Olszewski, W., Butkiewicz, P., Biernacka, M., Satuła, D., Rećko, K., Szafrański, M.

M\"ossbauer measurements on single crystal absorbers at room and at low temperatures were performed. The results are fully consistent with previously published reports by other groups. Spectra of single crystals were simultaneously analyzed including

Externí odkaz: http://arxiv.org/abs/2110.03285

Crystal structure and hyperfine fields in Mn1-xCoFexGe magnetocaloric alloys

Autor: Mieszczyński, M., Rećko, K., Kalska-Szostko, B., Olszewski, W., Szymański, K., Satuła, D.

Publikováno v: In Journal of Magnetism and Magnetic Materials 1 September 2023 581

Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications.

Autor: Majchrzak D; Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland., Kulinowski K; Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland., Olszewski W; Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland.; Institute of Experimental Physics, University of Wrocław, Maksa Borna 9, 50-204 Wrocław, Poland., Kuna R; Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland., Hlushchenko D; Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland.; Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland., Piejko A; Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland.; Department of Nanometrology, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland., Grodzicki M; Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland.; Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland., Hommel D; Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland.; Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422 Wrocław, Poland., Kudrawiec R; Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland.; Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Oct 30; Vol. 16 (43), pp. 59567-59575. Date of Electronic Publication: 2024 Oct 18.

Mössbauer spectroscopy illustrated by GaFeo3 example.

Autor: Szymański, K. R., Biernacka, M., Butkiewicz, P., Olszewski, W., Rećko, K.

Publikováno v: AIP Conference Proceedings; 2024, Vol. 2924 Issue 1, p1-6, 6p