Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Olof Hultin"'
Publikováno v:
21st Century Nanoscience – A Handbook ISBN: 9780429347290
21st Century Nanoscience – A Handbook
21st Century Nanoscience – A Handbook
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6576d7ee8d9b263990c5aacbf5377bfb
https://doi.org/10.1201/9780429347290-19
https://doi.org/10.1201/9780429347290-19
Autor:
Victor J. Gómez, Enrique Barrigón, Reza Jafari Jam, Magnus T. Borgström, Magnus Heurlin, Axel R. Persson, Håkan Pettersson, Lars Samuelson, Olof Hultin, Irene Geijselaers
We report on the synthesis of vertical InP nanowire arrays on (001) InP and Si substrates using template-assisted vapour–liquid–solid growth. A thick silicon oxide layer was first deposited on the substrates. The samples were then patterned by el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::252dc7611eeccb139b35f4c68af4e018
http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-41477
http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-41477
Autor:
Olof Hultin, Anders Gustafsson, Rainer Timm, Maryam Khalilian, Mats-Erik Pistol, Jonas Ohlsson, Reine Wallenberg, Jonas Johansson, Jovana Colvin, Filip Lenrick, Lars Samuelson, Zhaoxia Bi
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 16(30)
III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in the visible to ultraviolet spectral range. The development is hampered by lattice and thermal mismatch between the nitride layers and the growth substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::108551a5b8b10f18a73e4872df31c464
https://pubmed.ncbi.nlm.nih.gov/32578387
https://pubmed.ncbi.nlm.nih.gov/32578387
Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays
Autor:
Rainer Timm, Filip Lenrick, Rafal Ciechonski, Jovana Colvin, B. Jonas Ohlsson, Lars Samuelson, Anders Gustafsson, Maryam Khalilian, Anders Mikkelsen, Olof Hultin
Publikováno v:
Physical Review Materials
In this paper we present a process of forming monolithic GaN surface from an ordered nanowire array by means of material redistribution. This process, referred to as reformation, is performed in a conventional MOVPE crystal growth system with the gal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76df3fb7dd5c6bd6ac46fe6dee548480
https://doi.org/10.1103/physrevmaterials.3.093604
https://doi.org/10.1103/physrevmaterials.3.093604
Autor:
Rainer Timm, Reine Wallenberg, Anders Gustafsson, Anders Mikkelsen, Kristian Storm, Olof Hultin, B. Jonas Ohlsson, Filip Lenrick, Bo Monemar, Lars Samuelson, Zhaoxia Bi, Taiping Lu, Ali Nowzari, Jovana Colvin
Publikováno v:
Nano letters. 19(5)
In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8a2d08f35cf3b656eb30409fc92e806
https://pubmed.ncbi.nlm.nih.gov/30938533
https://pubmed.ncbi.nlm.nih.gov/30938533
Autor:
Fredrik Lindelow, Olof Hultin, Lars Samuelson, Vilgaile Dagyte, Tuomas Haggren, Renato T. Mourão, Gaute Otnes, Magnus T. Borgström
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth; 451, pp 18-26 (2016)
Journal of Crystal Growth; 451, pp 18-26 (2016)
We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350–500 °C for 5–20 min with either H2 environment or additional phosphor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0f203e41ac956e07c8329ca88ec8965
https://doi.org/10.1016/j.jcrysgro.2016.06.020
https://doi.org/10.1016/j.jcrysgro.2016.06.020
Autor:
Xulu, Zeng, Renato T, Mourão, Gaute, Otnes, Olof, Hultin, Vilgailė, Dagytė, Magnus, Heurlin, Magnus T, Borgström
Publikováno v:
Nanotechnology. 29(25)
To harvest the benefits of III-V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::455f38c34ef99e2565a154622d235174
https://pubmed.ncbi.nlm.nih.gov/29595525
https://pubmed.ncbi.nlm.nih.gov/29595525
Autor:
Farnaz Yadegari, Lars Samuelson, Linda Johansson, Olof Hultin, David Lindgren, Mikael Björk, Enrique Barrigón, Martin Magnusson
Publikováno v:
Nano Letters; 18(2), pp 1088-1092 (2018)
Nano Letters
Nano Letters
Semiconductor nanowires could significantly boost the functionality and performance of future electronics, light-emitting diodes, and solar cells. However, realizing this potential requires growth methods that enable high-throughput and low-cost prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eceaa2b00743832ccbbde1c9dd86f82b
https://lup.lub.lu.se/record/c6796a25-37c5-4d40-a345-b5efe2e04316
https://lup.lub.lu.se/record/c6796a25-37c5-4d40-a345-b5efe2e04316
Autor:
Olof Hultin, Gaute Otnes, Vilgailė Dagytė, Magnus T. Borgström, Renato T. Mourão, Magnus Heurlin, Zeng Xulu
Publikováno v:
Nanotechnology
Nanotechnology; 29(25), no 255701 (2018)
Nanotechnology; 29(25), no 255701 (2018)
To harvest the benefits of III–V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In x Ga(1−x)P nanow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5662887787c034f66d587a322b3cb0ac
Autor:
Olof Hultin, Kristian Storm, David Lindgren, Magnus Heurlin, Magnus T. Borgström, Lars Samuelson
Publikováno v:
Nano Letters. 14:749-753
InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc92fa8c3c9bf8a86cbf3c5c754a28a6
https://doi.org/10.1021/nl404039d
https://doi.org/10.1021/nl404039d