Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Olle Axelsson"'
Publikováno v:
IEEE Transactions on Electron Devices. 67:2297-2303
Poststress dc characteristics of AlGaN/GaN HEMTs can be used to study the effect of high-power stress on the noise figure (NF) and gain of low-noise amplifiers (LNAs) subjected to large input overdrives. This enables a shift from circuit- to transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6010dc62cd1585050070b98b71a95ded
https://doi.org/10.1109/ted.2020.2986806
https://doi.org/10.1109/ted.2020.2986806
Autor:
Mattias Thorsell, Olle Axelsson, Tongde Huang, Dan Kuylenstierna, Thanh Ngoc Thi Do, Niklas Rorsman
Publikováno v:
IEEE Transactions on Electron Devices. 63:3887-3892
High-frequency and low-frequency noise (LFN) performance of GaN high electron-mobility transistors (HEMTs), passivated with SiN x deposited by either $in~situ$ or low-pressure-chemical-vapor-deposition (LPCVD), are compared. From 8–26 GHz, the LPCV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95616071188baa0aa4a8668d7799c4d3
https://doi.org/10.1109/ted.2016.2597758
https://doi.org/10.1109/ted.2016.2597758
Autor:
Niklas Rorsman, Mattias Thorsell, Jorg Splettstoesser, Hans Hjelmgren, Sebastian Gustafsson, Hervé Blanck, Jim Thorpe, Olle Axelsson, Thomas Roedle
Publikováno v:
IEEE Transactions on Electron Devices. 63:326-332
This paper investigates the impact of different iron (Fe) buffer doping profiles on trapping effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs). We characterize not only the current collapse due to trapping in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49428d02e7013af24ee6fc8589cd932d
https://doi.org/10.1109/ted.2015.2499313
https://doi.org/10.1109/ted.2015.2499313
Publikováno v:
IEEE Electron Device Letters. 38:926-928
Three transistors with different AlGaN/GaN interface designs (sharp interface, standard interface, and an extra AlN interlayer) were studied in-depth under conditions mimicking low-noise amplifiers (LNAs) operation. A new measurement setup, analog to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51f7dbbcf2e3009638bbe1ef64f4bf96
https://doi.org/10.1109/led.2017.2709751
https://doi.org/10.1109/led.2017.2709751
Publikováno v:
IEEE Microwave and Wireless Components Letters. 26:31-33
This study investigates recovery time of the gain of AlGaN/GaN HEMT based low noise amplifiers (LNA) after an input overdrive pulse. Three LNAs, fabricated in two commercial MMIC processes and a Chalmers in-house process, are evaluated. The Chalmers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d16a896754dee48f45280489b96d58
https://doi.org/10.1109/lmwc.2015.2505641
https://doi.org/10.1109/lmwc.2015.2505641
Autor:
Olle Axelsson, Anna Malmros, Niklas Rorsman, Johan Bergsten, Mattias Thorsell, Sebastian Gustafsson, Tongde Huang
Publikováno v:
IEEE Electron Device Letters. 36:537-539
A bilayer SiN x passivation scheme has been developed using low pressure chemical vapor deposition (LPCVD), which effectively suppresses the dispersive effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) for microwave power operation. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8b13671f080340fb698b31a3e99a0f9
https://doi.org/10.1109/led.2015.2427294
https://doi.org/10.1109/led.2015.2427294
Autor:
Sebastian Gustafsson, Anna Malmros, Johan Bergsten, Niklas Rorsman, Tongde Huang, Olle Axelsson, Mattias Thorsell
Publikováno v:
2015 Asia-Pacific Microwave Conference (APMC).
A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f17686208263f5542eade021f988a91
https://doi.org/10.1109/apmc.2015.7413558
https://doi.org/10.1109/apmc.2015.7413558
Autor:
Xiang Gao, Niklas Rorsman, Olle Axelsson, Shiping Guo, Martin Fagerlind, Lester F. Eastman, Jonathan Felbinger, William J. Schaff
Publikováno v:
IEEE Electron Device Letters. 32:889-891
The growth, fabrication, and performance of Al0.5Ga0.5 N/AlN/GaN high-electron-mobility transistors (HEMTs) with a total barrier thickness of 7 nm are reported. An optimized surface passivation and an ohmic recess etch yield HEMTs exhibiting 0.72 S/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b2c781648da4e8723ad1883a71a2a30
https://doi.org/10.1109/led.2011.2143384
https://doi.org/10.1109/led.2011.2143384
Autor:
Kristoffer Andersson, Olle Axelsson
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
In this paper, two Low Noise Amplifiers designed in Gallium Nitride HEMT MMIC technology are presented. The focus of the designs is to achieve good linearity at low power consumption and acceptable noise figure. The first design achieves an OIP3/PDC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39e7fd2d5e96ba2b6b6b18507d4150ba
https://doi.org/10.1109/csics.2012.6340109
https://doi.org/10.1109/csics.2012.6340109
In this paper, the noise temperature of an electronic tuner is determined and its significance for the suitability of such tuners in noise parameter measurement systems discussed. The noise temperature of the tuner was found to be higher than the amb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7393b5e4031372a07a73b79a96cab7f2
https://hdl.handle.net/20.500.14017/2c69cf92-04b9-4310-99a0-d4df9a89b453
https://hdl.handle.net/20.500.14017/2c69cf92-04b9-4310-99a0-d4df9a89b453
