Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Olivier Toublan"'
Publikováno v:
Microelectronic Engineering. 86:492-496
The hybrid Hopkins-Abbe method is presented and shown to resolve the problem of the traditional Hopkins theory, namely the requirement for constant mask diffraction efficiencies. Simulation of electromagnetic scattering from the mask that takes into
Publikováno v:
IEEE Design & Test of Computers. 23:30-37
The steps that create physical shape data in a typical logic device design-to-reticle flow are cell layout, place and route, tapeout, OPC or RET, data fracture, and reticle build. Here, we define OPC as the transformation of reticle data to compensat
Autor:
Clement Moyroud, Alexandre Villaret, S. Postnikov, J. N. Pena, Vincent Farys, Charlotte Beylier, F. Bernard Granger, Olivier Toublan, Jorge Entradas, Frederic Robert, F. Chaoui, C. Gardin, Ana-Maria Armeanu, Emek Yesilada
Publikováno v:
SPIE Proceedings.
The resolution enhancement through lithography hardware (wavelength and Numerical Aperture) has come to a stop putting the burden on computational lithography to fill in the resulting gap between design and process until the arrival of EUV tools. New
Autor:
Francesco Perez-Murano, Livio Baldi, Hiroyuki Miyashita, Stéphanie Gaugiran, Luisa Rita Atzei, Patrick Wong, Xavier Buch, Dick Verkleij, Paolo Piacentini, Pietro Cantu, David Mecerreyes, Joost Sytsma, Bertrand Le Gratiet, Olivier Toublan
Publikováno v:
SPIE Proceedings.
In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twe
Publikováno v:
SPIE Proceedings.
At 32 nm node and beyond, one of the most critical processes is the holes patterning due to the Depth of Focus (DOF) that becomes rapidly limited. Thus the use of Sub Resolution Assist Features (SRAF) becomes mandatory to keep DOF at a sufficient lev
Autor:
Christophe Vérove, Francine Jérémie, Raùl Filipe Teixeira de Oliveira, Marie-Chantal Pons, Guillaume Pham, Olivier Toublan, Marine Oudot, Marc Brelot
Publikováno v:
Annales Des Télécommunications. 54:500-502
Autor:
Corinne Miramond, Kevin Lucas, Kyle Patterson, Olivier Toublan, Yorick Trouiller, Jorge Entradas, Robert Boone, Jerome Belledent, Amandine Borjon
Publikováno v:
SPIE Proceedings.
In the last 2 years, the semiconductor industry has recognized the critical importance of verification for optical proximity correction (OPC) and reticle/resolution enhancement technology (RET). Consequently, RET verification usage has increased and
Publikováno v:
SPIE Proceedings.
Besides models describing the exposure tool optical system, lumped parameter resist models are the other important model used during OPC. This combination is able to deliver the speed and accuracy required during OPC. Lumped parameter resist models a
Publikováno v:
SPIE Proceedings.
With the advent of the first immersion and hyper-NA exposure tools, source polarization quality will become a hot topic. At these oblique incident angles, unintentional source polarization could result in the intensity loss of diffraction orders poss
Autor:
Yorick Trouiller, Stanislas Baron, James Word, Amandine Borjon, Jean-Christophe Urbani, Jean-Damien Chapon, Christophe Couderc, Corinne Miramond, Jerome Belledent, Yves Rody, Christian Gardin, Frank Sundermann, Franck Foussadier, Olivier Toublan, Kyle Patterson, Kevin Lucas
Publikováno v:
SPIE Proceedings.
Specifications for CD control on current technology nodes have become very tight, especially for the gate level. Therefore all systematic errors during the patterning process should be corrected. For a long time, CD variations induced by any change i