Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Olivier Rayssac"'
Autor:
Cécile Berne, Kira Tsyganenko, Fabrice Letertre, Olivier Rayssac, Frederic Allibert, Konstantin Bourdelle, Xavier Hebras, Christophe Figuet, Alice Boussagol, Audrey Lambert, Frank Fournel, Carlos Mazure
Publikováno v:
ECS Transactions. 3:409-415
Introduction of hybrid orientation substrates has led to the development of CMOS technologies in which NMOS transistors are fabricated on (100) Si and PMOS on (110) Si. This maximizes the crystal orientation dependent mobilities of electrons and hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffdc3bdc86a7b267b383361f083543d5
https://doi.org/10.1149/1.2355775
https://doi.org/10.1149/1.2355775
Autor:
D. Bensahel, A. Tiberj, Vincent Paillard, N. Kernevez, M. N. Séméria, Bruno Ghyselen, Hubert Moriceau, Etienne Snoeck, André Rocher, C. Di Nardo, Alain Claverie, Pascal Besson, Thomas Ernst, J.M. Hartmann, Alexandra Abbadie, Cecile Aulnette, Anne Ponchet, Fuccio Cristiano, Frank Fournel, Olivier Rayssac, M. Cabié, Francois Andrieu, I. Cayrefourq, Laetitia Vincent, Philippe Boucaud, Carlos Mazure, Y. Bogumilowicz, Benedite Osternaud, Nicolas Daval
Publikováno v:
Solid-State Electronics. 48:1285-1296
Strained silicon on insulator wafers are today envisioned as a natural and powerful enhancement to standard SOI wafers and/or bulk-like strained Si layers. This paper is intended to demonstrate through miscellaneous structural results how a layer tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80645e4dd32d70e3eedeaa9e232397ed
https://doi.org/10.1016/j.sse.2004.01.011
https://doi.org/10.1016/j.sse.2004.01.011
Autor:
Fabrice Letertre, Benedite Osternaud, Nicolas Daval, Ian Cayrefourcq, C. Lagahe, B. Bataillou, C. Aulentte, C. Morales, N. Sousbie, S. Sartori, Carlos Mazure, Franck Fournel, Beatrice Biasse, E. Jalaguier, B. Aspar, J.F. Michaud, C. Richtarch, Bruno Ghyselen, A.M. Cartier, Takeshi Akatsu, S. Pocas, Olivier Rayssac, A. Beaumont, A. Soubie, Hubert Moriceau
Publikováno v:
Journal of Electronic Materials. 32:829-835
The SmartCut process was first developed to obtain silicon-on-insulator (SOI) materials. Now an industrial process, the main Unibond SOI-structure trends are reported in this paper. Many material combinations can be achieved by this process, because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4b45aa41353115a35fb42b8df91ba24
https://doi.org/10.1007/s11664-003-0196-x
https://doi.org/10.1007/s11664-003-0196-x
Autor:
Charlotte de Beaumont, Hubert Moriceau, Olivier Rayssac, Nicolas Bresson, S. Cristoloveanu, Anne-Marie Charvet
Publikováno v:
ECS Meeting Abstracts. :557-557
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90d794efb76cf021c1c1357229e3ff05
https://doi.org/10.1149/ma2005-01/12/557
https://doi.org/10.1149/ma2005-01/12/557