Une approche pluridisciplinaire et pluri-scalaire des dynamiques paysagères du bassin minier du Nord-Pas-de-Calais

Autor: Fabrice Raffin, Antoine Luginbühl, Olivier Pollet

Publikováno v: VertigO, Vol 24

The article addresses the complex dynamics of landscape observed on the territory of Henin Carvin’s urban area (Nord-Pas de Calais, France). Using a pluridisciplinary (landscape designers and sociologists) and participatory approach the article goe

Externí odkaz: https://doaj.org/article/97e5ed19c9264db9b11f2c24cf12ed5c

Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devices

Autor: Olivier Pollet, Valentin Bacquié, Nicolas Posseme, Aurélien Tavernier, F. Boulard

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39, pp.033005. ⟨10.1116/6.0000871⟩
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2021, 39, pp.033005. ⟨10.1116/6.0000871⟩

International audience; In this work, we optimize a CH$_3$F/O$_2$/He/SiCl$_4$ chemistry to etch silicon nitride gate spacers for 3D CMOS devices in a 300mm inductivelycoupled plasma reactor. The chemistry has high directivity and high selectivity to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19bd298fb321bf2e0cdf0b6aa9357aed
https://doi.org/10.1116/6.0000871

Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation

Autor: Olivier Pollet, Maxime Garcia Barros, Nicolas Posseme, Vincent Ah-Leung

Publikováno v: Solid State Phenomena. 255:69-74

For technology nodes beyond 14nm silicon nitride spacer etching has become a major challenge. Conventional plasma etching techniques based on CHF3/O2 cannot achieve thorough nitride removal on horizontal surfaces without inducing either CD loss or Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9f053e73720ae07b8c21d01154e4fd3
https://doi.org/10.4028/www.scientific.net/ssp.255.69

Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid

Autor: Olivier Pollet, G. Audoit, C. Guedj, Sébastien Barnola, Daniel Benoit, Maxime Garcia-Barros, Francois Leverd, Audrey Jannaud, Nicolas Posseme

Publikováno v: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩

International audience; Spacer etching realization is considered today as one of the most critical processes for the fully depleted silicon on insulator devices realization. The challenge arises from the fact that low-k spacer needs to be introduced

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25bad278b7bb95f625fbfd1e6f332c7e
https://cea.hal.science/cea-02185184/document

An Etch Stop and Sacrificial Materials Study for 3D NEMS-CMOS Co-Integration

Autor: Olivier Pollet, J. Philippe, Sebastien Hentz, Julien Arcamone, Issam Ouerghi, Thomas Ernst

Publikováno v: ECS Transactions. 61:395-400

In this paper, we compare several materials that can be used as sacrificial and etch stop layer for 3D NEMS-CMOS co-integration. During these last 10 years Very Large Scale Integration techniques, well developed for transistors, have been used for th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aebd9cbb8a7dfdcd05411b3e0361cfe0
https://doi.org/10.1149/06102.0395ecst