Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Olivier Ledoux"'
Autor:
F. Barbier, Amélie Dussaigne, F. Levy, B. Samuel, Olivier Ledoux, Roselyne Templier, David Sotta, Armelle Even, M. Rozhavskaia
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2020, 533, pp.125481-. ⟨10.1016/j.jcrysgro.2020.125481⟩
Journal of Crystal Growth, 2020, 533, pp.125481. ⟨10.1016/j.jcrysgro.2020.125481⟩
Journal of Crystal Growth, Elsevier, 2020, 533, pp.125481-. ⟨10.1016/j.jcrysgro.2020.125481⟩
Journal of Crystal Growth, 2020, 533, pp.125481. ⟨10.1016/j.jcrysgro.2020.125481⟩
International audience; The InGaN pseudo-substrate, namely InGaNOS (InGaN On Sapphire), is used to enhance the In incorporation rate in In$_y$Ga$_{1-y}$N/In$_x$Ga$_{1-x}$N multiple quantum wells (MQWs) to get red emission for micro-display applicatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed081d70c925c3a7abf231b38efbd80e
https://hal.archives-ouvertes.fr/hal-03489544
https://hal.archives-ouvertes.fr/hal-03489544
Autor:
Adeline Grenier, Le Maitre Patrick, Amélie Dussaigne, Roselyne Templier, F. Barbier, David Sotta, Fabian Rol, A. Jannaud, Helge Haas, Olivier Ledoux, Nicolas Michit, David Vaufrey, Jean-Christophe Pillet
Publikováno v:
Applied Physics Express. 14:092011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ad4df533b203c559806a90df91c048
https://doi.org/10.35848/1882-0786/ac1b3e
https://doi.org/10.35848/1882-0786/ac1b3e
Autor:
Felix Predan, Paul Beutel, Michael Schachtner, David Lackner, Frank Dimroth, Eric Guiot, E. Oliva, Olivier Ledoux, Gerald Siefer
Publikováno v:
2019 European Space Power Conference (ESPC).
Concentrator solar cells with efficiencies up to 46.1 % have been developed in a collaboration between Fraunhofer ISE, SOITEC and CEA-LETI using a fourjunction cell structure of GaInP/(Al)GaAs//GaInAsP/GaInAs joint by wafer bonding. The bottom tandem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9459d022ccc477a8aad4e96e4283e900
https://doi.org/10.1109/espc47532.2019.9049265
https://doi.org/10.1109/espc47532.2019.9049265
Autor:
Benjamin Damilano, Amélie Dussaigne, Melanie Lagrange, David Sotta, Sébastien Chenot, Eric Guiot, Guillaume Lavaitte, Olivier Ledoux
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Micro displays targeting virtual and augmented reality applications require pixel size in the range of $10\times 10\mu \mathrm{m}$ or below. Having InGaN based LEDs to emit directly over the full red-green-blue (RGB) spectrum would enable a cost effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48d44062130ed78d0f51f650195f4bcf
https://doi.org/10.1109/iciprm.2019.8819265
https://doi.org/10.1109/iciprm.2019.8819265
Autor:
Pierre Ferret, Ivan-Christophe Robin, Gautier Laval, Amélie Dussaigne, F. Levy, Olivier Ledoux, David Sotta, Armelle Even, Eric Guiot
Publikováno v:
Gallium Nitride Materials and Devices XII.
InGaN based LEDs are known to be very efficient in the blue range. However, although InGaN can theoretically cover all visible range, quantum efficiency drops when emission wavelength emission is increased due to quantum confined Stark effect. Furthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d6499b541388d99fced8f1013f6938a
https://doi.org/10.1117/12.2252290
https://doi.org/10.1117/12.2252290
Autor:
Olivier Ledoux, Ivan-Christophe Robin, G. Laval, Pierre Ferret, A. Even, Amelie Dussaigne, Eric Guiot, Francois Levy, David Sotta
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2017, 110 (26), pp.262103. ⟨10.1063/1.4989998⟩
Applied Physics Letters, 2017, 110 (26), pp.262103. ⟨10.1063/1.4989998⟩
Applied Physics Letters, American Institute of Physics, 2017, 110 (26), pp.262103. ⟨10.1063/1.4989998⟩
Applied Physics Letters, 2017, 110 (26), pp.262103. ⟨10.1063/1.4989998⟩
International audience; The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with different a lattice parameters ranging from 3.190 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c201e973b4b420e53e3ff61560a9df9
https://hal-cea.archives-ouvertes.fr/cea-02202433
https://hal-cea.archives-ouvertes.fr/cea-02202433
Conference
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Conference
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