Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Olivier Jambois"'
Autor:
Olivier Jambois, B. Garrido, Richard Rizk, Paolo Pellegrino, Sébastien Cueff, Christophe Labbé, Cédric Frilay, Larysa Khomenkova
Publikováno v:
Materials Science and Engineering: B. 177:725-728
This study compares the erbium emission from different Si-rich silicon oxynitrides matrices fabricated by magnetron sputtering. The Er-doped layers were grown by two different sputtering configurations: (i) standard co-sputtering of three confocal ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7607040a500ffb681c089658537e33f7
https://doi.org/10.1016/j.mseb.2011.12.007
https://doi.org/10.1016/j.mseb.2011.12.007
Autor:
Nicola Daldosso, N. Prtljaga, Federico Ferrarese Lupi, Alessandro Pitanti, Daniel Navarro-Urrios, Olivier Jambois, Lorenzo Pavesi, Paolo Pellegrino, B. Garrido
Publikováno v:
Università degli di Trento-IRIS
In this work we will give an overview of the optical properties of Si nanoclusters coupled to Er 3+ ions in SiO 2 matrices produced by reactive magnetron co-sputtering. We have divided the work into two separate studies realised on the same samples,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d2eafcbb168a75ad3f3beb3c7b527af
https://doi.org/10.1016/j.optmat.2010.12.003
https://doi.org/10.1016/j.optmat.2010.12.003
Autor:
Patrice Miska, Hervé Rinnert, Michel Vergnat, Paolo Pellegrino, J-M. Fedeli, Ana Martínez, Victor Izquierdo-Roca, M. Grün, Olivier Jambois, B. Garrido, Sergi Hernández
Publikováno v:
physica status solidi c. 8:969-973
The nonlinear optical properties of silicon nanocrystals (Si-nc) embedded in oxide matrices have been studied in samples obtained by three different technological process: e-beam evaporation, plasma enhanced or low pressure chemical vapor deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48c2bbf3cfd2786769a60e760e894946
https://doi.org/10.1002/pssc.201000420
https://doi.org/10.1002/pssc.201000420
Publikováno v:
Microelectronic Engineering. 85:2378-2381
A compact model that can be used to reproduce both quasi-static and dynamic characteristics of basic MOS cells with embedded Si-nc is presented. The structure is modeled through a device-like complex matrix of tunnel junctions, resulting in a time-de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3faf1e2d83f5a1e7f254af14d639c768
https://doi.org/10.1016/j.mee.2008.09.034
https://doi.org/10.1016/j.mee.2008.09.034
Autor:
F. Milesi, Aleksei Anopchenko, Olivier Jambois, N. Prtljaga, A. Marconi, Daniel Navarro-Urrios, J. P. Colonna, Nicola Daldosso, Lorenzo Pavesi, Blas Garrido, Jean-Marc Fedeli
Publikováno v:
Università degli di Trento-IRIS
Optical Materials
Optical Materials
Thin (50 nm) erbium implanted silicon rich oxide films suitable for slot waveguides applications have been produced and studied by means of optical spectroscopy and structural characterisation techniques. Comparison between different deposition techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5c4d94d6bb511f94cf87828b706f802
https://doi.org/10.1016/j.optmat.2010.12.004
https://doi.org/10.1016/j.optmat.2010.12.004
Autor:
A. Tengattini, N. Prtljaga, B. Garrido, J-M. Fedeli, P. Rivallin, Olivier Jambois, Lorenzo Pavesi, Daniel Navarro-Urrios, Federico Ferrarese Lupi, Joan Manel Ramirez, Aleksei Anopchenko, Yonder Berencén, J. P. Colonna
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
An integrated erbium-based light emitting diode has been realized in a waveguide configuration allowing 1.54 μm light signal routing in silicon photonic circuits. This injection device is based on an asymmetric horizontal slot waveguide where the ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2ddb7b6bd14e6046a016371d00e72c2
http://hdl.handle.net/10261/99318
http://hdl.handle.net/10261/99318
Autor:
Carlos Domínguez, J. A. Rodríguez, Olivier Jambois, Yonder Berencén, Joan Manel Ramirez, Josep Carreras, Charles E. Hunt, B. Garrido
Publikováno v:
Dipòsit Digital de la UB
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cebdea8ec494aff314e711c8251ac16b
https://hdl.handle.net/2445/32210
https://hdl.handle.net/2445/32210
Autor:
Sébastien Cueff, Yonder Berencén, Blas Garrido, Olivier Jambois, Anthony J. Kenyon, Christophe Labbé, Richard Rizk
Publikováno v:
Optics Express
Optics Express, 2012, 20 (20), pp.22490. ⟨10.1364/OE.20.022490⟩
ResearcherID
Optics Express, Optical Society of America-OSA Publishing, 2012, 20 (20), pp.22490. ⟨10.1364/OE.20.022490⟩
Recercat. Dipósit de la Recerca de Catalunya
instname
Dipòsit Digital de la UB
Universidad de Barcelona
Optics Express, 2012, 20 (20), pp.22490. ⟨10.1364/OE.20.022490⟩
ResearcherID
Optics Express, Optical Society of America-OSA Publishing, 2012, 20 (20), pp.22490. ⟨10.1364/OE.20.022490⟩
Recercat. Dipósit de la Recerca de Catalunya
instname
Dipòsit Digital de la UB
Universidad de Barcelona
We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiOx) layers. The effects of both the active layer thickness and the Si-excess content on the electrical ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd126627df42cccb61feccfbd2eb066d
https://hal.science/hal-01148169
https://hal.science/hal-01148169
Autor:
Lorenzo Pavesi, N. Prtljaga, Aleksei Anopchenko, J-M. Fedeli, A. Marconi, Yonder Berencén, J. P. Colonna, F. Milesi, Olivier Jambois, Daniel Navarro-Urrios, Joan Manel Ramirez, A. Tengattini, B. Garrido
Publikováno v:
Dipòsit Digital de la UB
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f8aad1a2f42f1d626b0ba4f63187218
http://hdl.handle.net/2445/25462
http://hdl.handle.net/2445/25462