Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Olivier Salicio"'
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (1), pp.402-406. ⟨10.1109/TED.2018.2881220⟩
IEEE Transactions on Electron Devices, 2019, 66 (1), pp.402-406. ⟨10.1109/TED.2018.2881220⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (1), pp.402-406. ⟨10.1109/TED.2018.2881220⟩
IEEE Transactions on Electron Devices, 2019, 66 (1), pp.402-406. ⟨10.1109/TED.2018.2881220⟩
Metal–insulator–metal (MIM) diodes with bulk-limited current conduction asymmetry employing interposed Al2O3 layer in 6-nm-thick HfO2 film have been investigated. The current density is decreased as the Al2O3 layer is located far from the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74ca06da97b9d432ee1bdc87f6f5bc10
https://hal.univ-grenoble-alpes.fr/hal-02325464
https://hal.univ-grenoble-alpes.fr/hal-02325464
Autor:
Khalil El Hajjam, Olivier Salicio, Bernard Pelissier, Rémi Vallat, R. Gassilloud, Christophe Vallée, Gabriel Molas
Publikováno v:
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2019, 37 (2), pp.020918. ⟨10.1116/1.5049361⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2019, 37 (2), pp.020918. ⟨10.1116/1.5049361⟩
Journal of Vacuum Science & Technology A, 2019, 37 (2), pp.020918. ⟨10.1116/1.5049361⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2019, 37 (2), pp.020918. ⟨10.1116/1.5049361⟩
A selective deposition process for bottom-up approach was developed in a modified plasma enhanced atomic layer deposition (PEALD) sequence. As a case study, a very standard PEALD TiO2 using organo-amine precursor and O2 plasma is chosen. The metal ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49a2506769b0bf705ed78807b8304b04
https://hal.univ-grenoble-alpes.fr/hal-02108939/file/vallat2019.pdf
https://hal.univ-grenoble-alpes.fr/hal-02108939/file/vallat2019.pdf
Autor:
Massimo Longo 1, Claudia Wiemer 1, Olivier Salicio O, Marco Fanciulli 1,2, Enrico Varesi 3, Paolo Targa 3
Publikováno v:
MRS Spring Meeting: Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications, pp. 124–124, San Francisco, California, USA, 2010
info:cnr-pdr/source/autori:Massimo Longo 1; Claudia Wiemer 1; Olivier Salicio O; Marco Fanciulli 1,2; Enrico Varesi 3; Paolo Targa 3/congresso_nome:MRS Spring Meeting: Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications/congresso_luogo:San Francisco, California, USA/congresso_data:2010/anno:2010/pagina_da:124/pagina_a:124/intervallo_pagine:124–124
info:cnr-pdr/source/autori:Massimo Longo 1; Claudia Wiemer 1; Olivier Salicio O; Marco Fanciulli 1,2; Enrico Varesi 3; Paolo Targa 3/congresso_nome:MRS Spring Meeting: Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications/congresso_luogo:San Francisco, California, USA/congresso_data:2010/anno:2010/pagina_da:124/pagina_a:124/intervallo_pagine:124–124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::15fafb98fd8b26a01852986560dce4d2
https://publications.cnr.it/doc/86981
https://publications.cnr.it/doc/86981
Autor:
Laurent Auvray, Stéphane Daniele, Sandrine Lhostis, Olivier Salicio, Frederique Ducroquet, Yohann Rozier, Catherine Dubourdieu
Publikováno v:
ECS transactions
ECS transactions, 2009, France. pp.669-684
ResearcherID
ECS transactions, 2009, France. pp.669-684
ResearcherID
SrTiO3, which has a very high dielectric permittivity κ in the form of bulk material (κ ~ 300), has been considered as a potential candidate for the replacement of SiO2-based gate oxide in future CMOS transistors and as a promising dielectric for n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03ce314fbe85948d35e98a0ce99b5457
https://hal.science/hal-00604265
https://hal.science/hal-00604265
Publikováno v:
Proceeding Volume 2003-13 "Thin Film Materials, Processes, and Reliability"
ECS 203th Meeting
ECS 203th Meeting, 2003, paris, France. pp.Volume 2003-13
ResearcherID
ECS 203th Meeting
ECS 203th Meeting, 2003, paris, France. pp.Volume 2003-13
ResearcherID
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b19a8803c9f950e5ee10e62f56061ed1
https://hal.archives-ouvertes.fr/hal-00484647
https://hal.archives-ouvertes.fr/hal-00484647
Autor:
Adulfas Abrutis, Valentina Plausinaitiene, Martynas Skapas, Claudia Wiemer, Olivier Salicio, Agostino Pirovano, Enrico Varesi, Simon Rushworth, Wojciech Gawelda, Jan Siegel
Publikováno v:
Chemistry of Materials; May2008, Vol. 20 Issue 11, p3557-3559, 3p
