Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Olivia D. Schneble"'
Autor:
Theresa E. Saenz, John S. Mangum, Olivia D. Schneble, Anica N. Neumann, Ryan M. France, William E. McMahon, Jeramy D. Zimmerman, Emily L. Warren
Publikováno v:
ACS Applied Electronic Materials. 5:721-728
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c517504971e6189e78fb132d25128e67
https://doi.org/10.1021/acsaelm.2c01688
https://doi.org/10.1021/acsaelm.2c01688
Towards a III-V solar cell with a metamorphic graded buffer directly grown on v-groove Si substrates
Autor:
Theresa E. Saenz, John S. Mangum, Olivia D. Schneble, Ivan Garcia, Ryan M. France, William E. McMahon, Jeramy D. Zimmerman, Emily L. Warren
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
V-groove Si substrates offer a promising route for the direct growth of III-V solar cells on low-cost, photovoltaic-grade Si. In this work, we develop a method for coalescing GaP nucleated on V-groove substrates into thin films suitable for the growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa25da5e3559418636f2bbdf95ebf863
https://doi.org/10.1109/pvsc43889.2021.9518609
https://doi.org/10.1109/pvsc43889.2021.9518609
Publikováno v:
OSA Advanced Photonics Congress 2021.
We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (¿5 µm) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5bc18101eeefc469c9ce8d33006ca24
https://doi.org/10.1364/pvled.2021.pvw1e.5
https://doi.org/10.1364/pvled.2021.pvw1e.5
Autor:
Jeramy D. Zimmerman, Andrew G. Norman, John S. Mangum, Olivia D. Schneble, Anica Neumann, Emily L. Warren
Publikováno v:
Journal of Vacuum Science & Technology A. 39:013404
Direct growth of III–V semiconductors on Si promises to combine the superior optoelectronic properties of III–Vs with the existing large-scale fabrication capabilities for Si. Vapor-liquid-solid-based growth techniques have previously been used t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e35f82f639fb6160c158aebadd70ba
https://doi.org/10.1116/6.0000728
https://doi.org/10.1116/6.0000728