Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Oliver Supplie"'
Autor:
Oliver Supplie, Matthias M. May, Peter Kleinschmidt, Andreas Nägelein, Agnieszka Paszuk, Sebastian Brückner, Thomas Hannappel
Publikováno v:
APL Materials, Vol 3, Iss 12, Pp 126110-126110-6 (2015)
Metalorganic vapor phase epitaxy of III-V compounds commonly involves arsenic. We study the formation of atomically well-ordered, As-modified Si(100) surfaces and subsequent growth of GaP/Si(100) quasisubstrates in situ with reflection anisotropy spe
Externí odkaz:
https://doaj.org/article/d3ec078d191d4bd6b8deb965132be78d
Autor:
Matthias M May, Oliver Supplie, Christian Höhn, Roel van de Krol, Hans-Joachim Lewerenz, Thomas Hannappel
Publikováno v:
New Journal of Physics, Vol 15, Iss 10, p 103003 (2013)
We study the initial interaction of adsorbed H _2 O with P-rich and Ga-rich GaP(100) surfaces. Atomically well defined surfaces are prepared by metal-organic vapour phase epitaxy and transferred contamination-free to ultra-high vacuum, where water is
Externí odkaz:
https://doaj.org/article/494409c3afa94a4eadd88ad27179f10f
Publikováno v:
New Journal of Physics, Vol 15, Iss 11, p 113049 (2013)
Double-layer step formation on Si(100) substrates is a crucial prerequisite for antiphase-domain free III–V compound semiconductor heteroepitaxy. Due to its unequaled relevance in microelectronics, the (100) oriented surface of silicon is by far th
Externí odkaz:
https://doaj.org/article/005034663a544a84b388dceede041d07
Autor:
Benjamin Borkenhagen, Agnieszka Paszuk, Franz Niklas Knoop, Oliver Supplie, Manali Nandy, Gerhard Lilienkamp, Peter Kleinschmidt, Thomas Hannappel, Winfried Daum
Publikováno v:
Crystal Growth & Design. 22:7040-7049
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f60ab65c4b2434cfe4790c787cdf32e2
https://doi.org/10.1021/acs.cgd.2c00697
https://doi.org/10.1021/acs.cgd.2c00697
Publikováno v:
SciPost Physics, Vol 6, Iss 5, p 058 (2019)
The initial interaction of water with semiconductors determines the electronic structure of the solid-liquid interface. The exact nature of this interaction is, however, often unknown. Here, we study gallium phosphide-based surfaces exposed to H2O by
Externí odkaz:
https://doaj.org/article/3d5171b443cc488f98c7c5ddd898f907
Autor:
Jakob Bombsch, Oliver Supplie, P. Jiříček, Thomas Hannappel, Claudia Hartmann, Agnieszka Paszuk, Regan G. Wilks, Shigenori Ueda, Jan Philipp Stoeckmann, Ivan Gordeev, Marcus Bär, Oleksandr Romanyuk, J. Houdkova, I. Bartoš, Raul Garcia-Diez, Peter Kleinschmidt
Publikováno v:
Surface and Interface Analysis. 52:933-938
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a08740b661e9a2996055d0f301fbe7d
https://doi.org/10.1002/sia.6829
https://doi.org/10.1002/sia.6829
Autor:
Oliver Supplie, Masakazu Sugiyama, Peter Kleinschmidt, Boram Kim, Anja Dobrich, Thomas Hannappel, Agnieszka Paszuk, Sebastian Brückner, Manali Nandy, Yoshiaki Nakano
Publikováno v:
Applied Surface Science. 462:1002-1007
Low-defect III-V integration on Si(1 0 0) requires atomically well-ordered heterointerfaces. To this end, we study the interaction of As with Si(1 0 0) surfaces and the formation of dimerized Si(1 0 0):As surfaces in situ with reflection anisotropy s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72b11ee36915ce6a5d3f093d4a4268f3
https://doi.org/10.1016/j.apsusc.2018.07.181
https://doi.org/10.1016/j.apsusc.2018.07.181
Autor:
Erich Runge, Andreas Nägelein, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, Matthias Steidl, Oleksandr Romanyuk, Agnieszka Paszuk, Thomas Hannappel, Lars Winterfeld, Christian Koppka
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 64:103-132
The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68cfca3aec9e9e1bc214446d6723e9a4
https://doi.org/10.1016/j.pcrysgrow.2018.07.002
https://doi.org/10.1016/j.pcrysgrow.2018.07.002
Autor:
Oliver Supplie, Manali Nandy, Thomas Hannappel, Peter Kleinschmidt, Alexander Heinisch, Ammar Tummalieh, Masakazu Sugiyama, Agnieszka Paszuk
Epitaxial integration of direct-bandgap III–V compound semiconductors with silicon requires overcoming a significant lattice mismatch. To this end, GaAsP step-graded buffer layers are commonly applied. The thickness and composition of the individua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c28aa2d8768ba30a2b8b66bdda8f6f01
https://publica.fraunhofer.de/handle/publica/265926
https://publica.fraunhofer.de/handle/publica/265926
Autor:
Oliver Supplie, Thomas Hannappel, Agnieszka Paszuk, Masakazu Sugiyama, Yoshiaki Nakano, Boram Kim, Kasidit Toprasertpong
Publikováno v:
Solar Energy Materials and Solar Cells. 180:303-310
The combination of tunable direct bandgap III-V absorbers with active Si substrates promises high-efficiency tandem solar cells. To yield the ideal III-V bandgaps between 1.6 and 1.8 eV which is considered to achieve current matching with the Si bott
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf69f4a57a18eeb914727688691c6c6
https://doi.org/10.1016/j.solmat.2017.06.060
https://doi.org/10.1016/j.solmat.2017.06.060