Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Oliver Lahr"'
Publikováno v:
Frontiers in Electronics, Vol 2 (2021)
Due to their low-temperature processing capability and ionic bonding configuration, amorphous oxide semiconductors (AOS) are well suited for applications within future mechanically flexible electronics. Over the past couple of years, amorphous zinc t
Externí odkaz:
https://doaj.org/article/2dabc4c6cd504c7e9e8099902b9aa8ab
Publikováno v:
APL Materials, Vol 8, Iss 9, Pp 091111-091111-8 (2020)
Recent advances in the field of integrated circuits based on sustainable and transparent amorphous oxide semiconductors (AOSs) are presented, demonstrating ultrahigh performance operating state-of-the-art integrated inverters comprising metal–semic
Externí odkaz:
https://doaj.org/article/98718ebb927a40f0800a10ae99394b2d
Publikováno v:
Challenging Glass Conference Proceedings, Vol 6, Iss 1 (2018)
The owner of a 1970s, 24-story commercial office tower in Ottawa, Canada sought to rejuvenate their main lobby with a new glass entry wall. The wall’s purpose is to provide a notable, grand entryway for the re-development of a commercial podium on
Externí odkaz:
https://doaj.org/article/991e239aa4e34166967ba186f3260e3e
Autor:
Marius Grundmann, Zhipeng Zhang, Sofie Vogt, Andreas Thiede, Oliver Lahr, Holger von Wenckstern, Peter Schlupp, Frank Grotjahn
Publikováno v:
IEEE Transactions on Electron Devices. 66:3376-3381
Metal–semiconductor and junction n-channel field-effect transistors (MESFETs and JFETs) have been fabricated on glass substrates using room temperature deposited amorphous zinc–tin oxide (ZTO) channel layers. Characteristics of transistors and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18bd1592c3a5bf0b040963a9df66636b
https://doi.org/10.1109/ted.2019.2922696
https://doi.org/10.1109/ted.2019.2922696
Publikováno v:
Advanced Electronic Materials. 6:2000423
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d4b023ed68ce83a25b6ea49cc71703
https://doi.org/10.1002/aelm.202000423
https://doi.org/10.1002/aelm.202000423