Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Oliver J. L. Fox"'
Autor:
Thomas E. J. Moxham, Vishal Dhamgaye, David Laundy, Oliver J. L. Fox, Hossein Khosroabadi, Kawal Sawhney, Alexander M. Korsunsky
Publikováno v:
Optics Express. 30:19185
Aberrations introduced during fabrication degrade the performance of X-ray optics and their ability to achieve diffraction limited focusing. Corrective optics can counteract these errors by introducing wavefront perturbations prior to the optic which
Publikováno v:
May, P, Harniman, R & Fox, O 2017, ' Direct observation of electron emission from CVD diamond grain boundaries by tunnelling atomic force microscopy independent of surface morphology ', Diamond and Related Materials, vol. 80, pp. 147-152 . https://doi.org/10.1016/j.diamond.2017.09.009
We present direct observation of the electron field emission sites over a large area of polycrystalline diamond using tunnelling atomic force microscopy. Any effects of surface topography have been reduced by measuring polycrystalline samples which h
Publikováno v:
Bulletin of the African Bird Club. 24:85-87
Autor:
Paul W May, Oliver J. L. Fox, Robert L. Harniman, Wiebke Janssen, Ken Haenen, Sien Drijkoningen
Publikováno v:
Harniman, R, Fox, O, Janssen, W, Drijkoningen, S, Haenen, K & May, P 2015, ' Direct observation of electron emission from grain boundaries in CVD diamond by PeakForce-controlled tunnelling atomic force microscopy ', Carbon, vol. 94, pp. 386-395 . https://doi.org/10.1016/j.carbon.2015.06.082
A detailed investigation of electron emission from a set of chemical vapour deposited (CVD) diamond films is reported using high-resolution PeakForce-controlled tunnelling atomic force microscopy (PF-TUNA). Electron field emission originates preferen
Publikováno v:
IEEE Electron Device Letters. 32:599-601
We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 μm to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. A
Publikováno v:
69th Device Research Conference.
The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs) [1]. Further exploration into the intrinsic performance limitations and device operation as
Autor:
Oliver J. L. Fox, Esben Thormann, Davide Mattia, Per M. Claesson, Wuge H. Briscoe, Georgia A. Pilkington, Gareth M. Fuge, Michael N. R. Ashfold, Hannah S. Leese
Publikováno v:
Physical chemistry chemical physics : PCCP. 13(20)
With nanotextured surfaces and interfaces increasingly being encountered in technological and biomedical applications, there is a need for a better understanding of frictional properties involving such surfaces. Here we report friction measurements o
Publikováno v:
MRS Proceedings. 1203
Nucleation is the rate-determining step in the initial stages of most chemical vapour deposition processes. In order to achieve uniform deposition of diamond thin films it is necessary to seed non-diamond substrates. Here we discuss a simple electros
Publikováno v:
Journal of Applied Physics. 109:063307
A comprehensive study of microwave (MW) activated CH4/H2/Ar plasmas used for diamond chemical vapor deposition is reported, focusing particularly on the effects of gross variations in the H2/Ar ratio in the input gas mixture (from H2/Ar mole fraction