Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Oliver J Vavasour"'
Autor:
A. Benjamin Renz, Oliver J. Vavasour, Peter M. Gammon, Fan Li, Tian Xiang Dai, G.W.C. Baker, Nicholas Grant, John Murphy, Phillip A. Mawby, Vish Al Shah
Publikováno v:
Materials Science Forum. 1062:325-329
A systematic capacitance-voltage (C-V) and time-dependent dielectric breakdown (TDDB) study on silicon carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) that use silicon dioxide (SiO2) is shown in this paper. Oxides were formed using atomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8cf5fe157aca21c708cfc09aafa650c
https://doi.org/10.4028/p-b76y6c
https://doi.org/10.4028/p-b76y6c
Autor:
A. Benjamin Renz, Oliver J. Vavasour, Amador Pérez-Tomás, Qin Ze Cao, Vish Al Shah, Yeganeh Bonyadi, Vasantha Pathirana, Tanya Trajkovic, G.W.C. Baker, Phillip A. Mawby, Peter M. Gammon
Publikováno v:
Materials Science Forum. 1062:190-194
A systematic study is presented into the impact of a P2O5 surface passivation treatment, carried out prior to the deposition of a high refactory metal contact to 3.3 kV JBS diodes. Electrical results from Mo, W and Nb diodes reveal that those diodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ede7427a9e284980b00dbd0adc078f
https://doi.org/10.4028/p-97jy4p
https://doi.org/10.4028/p-97jy4p
Autor:
Arne Benjamin Benjamin Renz, Oliver J Vavasour, Peter Michael Gammon, Fan Li, Tianxiang Dai, Guy W C Baker, Nicholas E Grant, John D Murphy, P. A. Mawby, Vishal Ajit Shah, James Gott
Publikováno v:
ECS Transactions. 108:43-49
A major component of reliability of Silicon Carbide (4H-SiC) power electronics are due to the gate dielectric. Specific aspects such as hysteresis, insulator lifetime, threshold voltage (VTH) instability and high leakage currents, remain an issue of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b2e0dc829db00e62283a18492623201
https://doi.org/10.1149/10802.0043ecst
https://doi.org/10.1149/10802.0043ecst
Autor:
Peter M. Gammon, Vishal Shah, A. B. Renz, Philip Mawby, Oliver J. Vavasour, Tianxiang Dai, L. Zhang, Marina Antoniou
Publikováno v:
IEEE Transactions on Electron Devices. 68:1162-1167
This article proposes a compact trench-assisted space-modulated junction termination extension (TSM-JTE) design for high-voltage 4H-silicon carbide (SiC) devices. In this design, trench structures are introduced into the JTE region to effectively spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64b8296df7681b2a38f0bccce8046933
https://doi.org/10.1109/ted.2020.3047348
https://doi.org/10.1109/ted.2020.3047348
Autor:
A. Benjamin Renz, Oliver J. Vavasour, Mathias Rommel, G.W.C. Baker, Peter M. Gammon, Tian Xiang Dai, Fan Li, Marina Antoniou, Phillip A. Mawby, Vish Al Shah
A systematic germanium (Ge) and vanadium (V) study on 4H-SiC epitaxial layers is presented. Electrical results of TLM structures which were fabricated on these layers revealed that highly-doped Ge and V-implanted layers showed extremely low specific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c35641aabdddf2b3076a464906d3bc38
http://wrap.warwick.ac.uk/166198/1/WRAP-study-high-resistivity-semi-insulating-4H-SiC-epilayers-formed-via-the-implantation-Germanium-Vanadium-2022.pdf
http://wrap.warwick.ac.uk/166198/1/WRAP-study-high-resistivity-semi-insulating-4H-SiC-epilayers-formed-via-the-implantation-Germanium-Vanadium-2022.pdf
Autor:
Oliver J. Vavasour, Tianxiang Dai, Luyang Zhang, A. B. Renz, G. W. C. Baker, Peter M. Gammon, Philip Mawby, Vishal Shah
Publikováno v:
Materials Science Forum. 1004:808-813
Planar Schottky contact and various trench Schottky contacts have been integrated into the edge termination region of a 4H-SiC trench metal-oxide-semiconductor field-effect-transistor (MOSFET). The forward and reverse characteristics of various desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e2630e3f28757bbe2f1156afa7f4c7
https://doi.org/10.4028/www.scientific.net/msf.1004.808
https://doi.org/10.4028/www.scientific.net/msf.1004.808
Autor:
G. W. C. Baker, Peter M. Gammon, John D. Murphy, Tian Dai, Oliver J. Vavasour, Nicholas E. Grant, Siavash Esfahani, Philip Mawby, A. B. Renz, Vishal Shah, Fan Li
Publikováno v:
Materials Science Forum. 1004:547-553
A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O), in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967c86f03b7fd191ce0ac657693f8463
https://doi.org/10.4028/www.scientific.net/msf.1004.547
https://doi.org/10.4028/www.scientific.net/msf.1004.547
Autor:
Peter M. Gammon, Tanya Trajkovic, A. B. Renz, V. Pathirana, Oliver J. Vavasour, Ruizhu Wu, Philip Mawby, Xiaoyun Rong, Vishal Shah, Yeganeh Bonyadi, Jose Ortiz-Gonzalez, Guy William Clarke Baker
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
3.3 kV Schottky barrier diodes and Junction Barrier Schottky diodes have been fabricated, employing a phosphorous pentoxide $\left(P_{2}O_{5}\right)$ surface treatment prior to metal deposition in an attempt to further condition the power device’s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c1896c085ad20d066afdc7e6c5190b1
https://doi.org/10.1109/ecce47101.2021.9594999
https://doi.org/10.1109/ecce47101.2021.9594999
Autor:
Fan Li, Vishal Shah, Tian Dai, A. Benjamin Renz, Oliver J. Vavasour, Philip Mawby, G. W. C. Baker, Yeganeh Bonyadi, Marc Walker, Peter M. Gammon
Publikováno v:
Materials Science Forum. 963:511-515
Passivation treatments applied prior to Mo metallisation on Silicon Carbide (SiC) Schottky rectifier and metal-oxide-semiconductor capacitor (MOSCAP) structures are studied. A control sample and two treatments, comprising of an O2 oxidation and a pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75f1eea74e15b46da10799342a2eac2c
https://doi.org/10.4028/www.scientific.net/msf.963.511
https://doi.org/10.4028/www.scientific.net/msf.963.511
Autor:
L. Zhang, A. B. Renz, Q. Cao, Vishal Shah, Marina Antoniou, Tianxiang Dai, Philip Mawby, Peter M. Gammon, Oliver J. Vavasour
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We have experimentally verified a compact trench-assisted space-modulated junction termination extension (TSM-JTE) structure which has been designed for high voltage SiC devices. The proposed termination design introduces shallow trench structures in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e15f3e4f3a7a2f90ac7eb2c9e89433
https://doi.org/10.23919/ispsd50666.2021.9452270
https://doi.org/10.23919/ispsd50666.2021.9452270