Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Oliver Haeberlen"'
Autor:
Jinming Sun, Oliver Haeberlen, Clemens Ostermaier, Gerhard Prechtl, Ramakrishna Tadikonda, Eric Persson, Reenu Garg, Mohamed Imam, Sameh Khalil, Alain Charles
Publikováno v:
AIP Advances, Vol 11, Iss 5, Pp 055101-055101-10 (2021)
The addition of a p-GaN drain to a conventional gate-injection transistor (GIT), forming the so-called hybrid drain embedded GIT, is crucial in the suppression of the dynamic Rdson. The DC leakage due to hole injection is limited to around 10 nA/mm a
Externí odkaz:
https://doaj.org/article/395a853db1964f978a07212d211175e9
Autor:
Marco Barbato, Oliver Haeberlen, Giorgio Spiazzi, Matteo Meneghini, Marco Silvestri, Enrico Zanoni, Gaudenzio Meneghesso, Thomas Detzel, A. Barbato
This study presents a novel system to investigate the on-wafer level dynamic properties of GaN-based power transistors in hard-switching application conditions. The system is able to analyse devices with an on-resistance (R DSON) in the range from fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08160b11193b8065b0295bf489107fae
http://hdl.handle.net/11577/3365269
http://hdl.handle.net/11577/3365269
Publikováno v:
CPSS Transactions on Power Electronics and Applications. 2:89-100
With the commercial availability of GaN and SiCbased power semiconductor devices having significantly improved material characteristics, there is a need to discuss the perspective of the underlying physical loss mechanisms of these devices versus the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27df15043e47a474d102d92050b55816
https://doi.org/10.24295/cpsstpea.2017.00010
https://doi.org/10.24295/cpsstpea.2017.00010
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Compact devices with unique switching performance, this has been the promise of GaN power devices since several years. After a development journey of more than one decade, the commercialization of GaN based normally-off power devices is gaining stron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88204c233b4a889facb1d714382e1ce9
https://doi.org/10.1109/iciprm.2019.8819303
https://doi.org/10.1109/iciprm.2019.8819303
Autor:
Alain Charles, Gerhard Prechtl, Mohamed Imam, Sameh G. Khalil, R. Tadikonda, Oliver Haeberlen, Eric Persson, Clemens Ostermaier, Reenu Garg, Jinming Sun
Publikováno v:
AIP Advances, Vol 11, Iss 5, Pp 055101-055101-10 (2021)
The addition of a p-GaN drain to a conventional gate-injection transistor (GIT), forming the so-called hybrid drain embedded GIT, is crucial in the suppression of the dynamic Rdson. The DC leakage due to hole injection is limited to around 10 nA/mm a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7e0ccf713135200aae24c62be8ccfee
https://doi.org/10.1063/5.0049319
https://doi.org/10.1063/5.0049319
Autor:
Thomas Detzel, Stefaan Decoutere, Matteo Borga, Marco Barbato, Steve Stoffels, Ming Zhao, Gaudenzio Meneghesso, Oliver Haeberlen, Niels Posthuma, A. Barbato, Enrico Zanoni, Matteo Meneghini, C. De Santi
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
This paper describes our most advanced results in the field of GaN-HEMT degradation, with focus on power devices. We discuss three main aspects: (i) the first part of the paper analyzes the dependence of breakdown voltage on substrate and buffer prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06fc3782f0ae8fa702f62e7a616a5d5b
https://doi.org/10.1109/iedm.2018.8614605
https://doi.org/10.1109/iedm.2018.8614605
Autor:
Thomas Detzel, Gaudenzio Meneghesso, Enrico Zanoni, V. Padovan, Maria Ruzzarin, Matteo Meneghini, A. Barbato, Marco Silvestri, Oliver Haeberlen
This paper investigates the degradation of GaN-based HEMTs with p-type gate submitted to positive gate bias stress. Based on combined electrical and optical testing, we demonstrate the existence of different degradation processes, depending on the ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0eece2888ded50aa45fc471f0c9dce88
http://hdl.handle.net/11577/3276899
http://hdl.handle.net/11577/3276899
Autor:
Ruzzarin, Maria, Barbato, Alessandro, Meneghini, Matteo, Rossetto, Isabella, Marco, Silvestri, Oliver, Haeberlen, Thomas, Detzel, Meneghesso, Gaudenzio, Zanoni, Enrico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3657::14330a44977670e6ceb877d58588a898
http://hdl.handle.net/11577/3333379
http://hdl.handle.net/11577/3333379
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
A consistent description of breakdown characteristics in ohmic-to-ohmic, ohmic-to-substrate and HEMT structures has been achieved by means of device simulations for a depletion-mode AlGaN/GaN MIS-HEMT technology on Si substrate suited for power switc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::130c4e323ca804434f8a1fa7bcca28f5
https://doi.org/10.1109/edssc.2015.7285171
https://doi.org/10.1109/edssc.2015.7285171
Autor:
Gerhard Prechtl, Oliver Haeberlen, S. Lavanga, Jörg Franke, A. Kassmanhuber, Gianmauro Pozzovivo, Gilberto Curatola, S. Yuferev, Thomas Detzel
Publikováno v:
ESSDERC
The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09eef02ce2909b7ad4e869c0061109f
https://doi.org/10.1109/essderc.2014.6948829
https://doi.org/10.1109/essderc.2014.6948829