Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Oliver Blank"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:1168-1175
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6df643cc485346c0d17e8d7937cbe56
https://doi.org/10.1109/ted.2022.3230917
https://doi.org/10.1109/ted.2022.3230917
Publikováno v:
Applied Physics Letters. 121:062107
We present characterization results of integrated vacuum gaps in semiconductors and report the highest breakdown field of dielectric layers ever recorded within microfabricated semiconductor devices. Difficulties associated with the characterization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedf830857edc583deb77cc2b36792e8
https://doi.org/10.1063/5.0097043
https://doi.org/10.1063/5.0097043
Publikováno v:
Microelectronic Engineering. 264:111870
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978ad0274902e894f7c3c2c49e2e9d49
https://doi.org/10.1016/j.mee.2022.111870
https://doi.org/10.1016/j.mee.2022.111870
Autor:
Stefan Karner, Oliver Blank, Maximilian Rösch, Manfred Burghammer, Jakub Zalesak, Jozef Keckes, Juraj Todt
Publikováno v:
Materialia. 24:101484
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229f565505388de61a5e46efc89d05bd
https://doi.org/10.1016/j.mtla.2022.101484
https://doi.org/10.1016/j.mtla.2022.101484
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The interaction between the reverse recovery charge and the output charge in trench power MOSFETs is discussed. As the trade-off between the on-resistance and the gate charge improves, the output capacitance has more impact on the reverse recovery lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ec8f2e8ab3c16a1e541418f8bad0268
https://doi.org/10.1109/ispsd46842.2020.9170155
https://doi.org/10.1109/ispsd46842.2020.9170155
Design considerations for charge‐compensated fast‐switching power MOSFET in the medium‐voltage range
Publikováno v:
IET Power Electronics. 11:638-645
Low-voltage power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on charge compensation using a field plate offer a significant reduction of the area-specific on-resistance. The extension of their blocking capability into the so-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03c678bcf68faa121fcef69d2bb9d2e6
https://doi.org/10.1049/iet-pel.2017.0385
https://doi.org/10.1049/iet-pel.2017.0385
Autor:
Michael Hutzler, Ralf Siemieniec, Oliver Blank, David Laforet, Li Juin Yip, Alan Huang, Ralf Walter
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 28:477-494
Low-voltage power MOSFETs based on charge-compensation using a field-plate offer a significant reduction of the area-specific on-resistance. Beside a further improvement of this key parameter, the new device generation takes an in-depth focus on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0feae41cd8eaa5eee3b636b35b157c
https://doi.org/10.2298/fuee1503477s
https://doi.org/10.2298/fuee1503477s
Publikováno v:
The Cochrane Library
Background Combined modality treatment consisting of chemotherapy followed by localised radiotherapy is the standard treatment for patients with early stage Hodgkin lymphoma (HL). However, due to long- term adverse effects such as secondary malignanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3eca1a1c8168040e79c89bff18d59661
https://doi.org/10.1002/14651858.cd007110.pub3
https://doi.org/10.1002/14651858.cd007110.pub3
Publikováno v:
The Cochrane Library
Reason for Withdrawal Authors have made no progress with this protocol in several years. New authors are being sought to take over this protocol. To view the published versions of this article, please click the 'Other versions' tab.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc6d954ad4b1b61c5dcd04f6869f91df
https://doi.org/10.1002/14651858.cd008094.pub4
https://doi.org/10.1002/14651858.cd008094.pub4
Autor:
Oliver Blank, Jörg-Janne Vehreschild, Ina Monsef, Nicole Skoetz, Julia Bohlius, Andreas Engert
Publikováno v:
The Cochrane Library
Skoetz, Nicole; Bohlius, Julia; Engert, Andreas; Monsef, Ina; Blank, Oliver; Vehreschild, Jörg-Janne (2015). Prophylactic antibiotics or G(M)-CSF for the prevention of infections and improvement of survival in cancer patients receiving myelotoxic chemotherapy. Cochrane database of systematic reviews, 12(12), CD007107. WileyInterscience 10.1002/14651858.CD007107.pub3
Skoetz, Nicole; Bohlius, Julia; Engert, Andreas; Monsef, Ina; Blank, Oliver; Vehreschild, Jörg-Janne (2015). Prophylactic antibiotics or G(M)-CSF for the prevention of infections and improvement of survival in cancer patients receiving myelotoxic chemotherapy. Cochrane database of systematic reviews, 12(12), CD007107. WileyInterscience 10.1002/14651858.CD007107.pub3
BACKGROUND Febrile neutropenia (FN) and other infectious complications are some of the most serious treatment-related toxicities of chemotherapy for cancer, with a mortality rate of 2% to 21%. The two main types of prophylactic regimens are granulocy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1df78c7afbfb4a07c15cf5ba00956cec
https://pubmed.ncbi.nlm.nih.gov/19160320
https://pubmed.ncbi.nlm.nih.gov/19160320