Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Olinda Conde"'
Publikováno v:
Modern Physics Letters B. 24:2837-2843
CdTe -doped SiO 2 thin films were produced by RF magnetron co-sputtering technique. Presence of CdTe nanocrystals inside the silica matrix was confirmed by Raman spectroscopy and grazing incidence X-ray diffraction. The samples demonstrate size depen
Autor:
Pedro Parreira, Joao Valente, Guilherme Lavareda, Ana Amaral, CARLOS ALBERTO NUNES DE CARVALHO, Olinda Conde
Publikováno v:
Surface and Coatings Technology. 202:3893-3896
Transparent and conductive undoped tin oxide (SnOx) thin films were deposited at low substrate temperature (
Autor:
Mikhail Vasilevskiy, Anabela Rolo, Adil Chahboun, Maria de Jesus de Matos Gomes, Olinda Conde
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
The authors are grateful to Dr. L. Rebouta for the RBS studies and to Dr. G. Hungerford for his careful reading of the manuscript.
SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction s
SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction s
Autor:
Anabela Rolo, Eduardo Alves, E M F Vieira, Adil Chahboun, Andrea Parisini, Maria de Jesus de Matos Gomes, Javier Martín Sánchez, Nuno Pessoa Barradas, Olinda Conde
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
331 (2014): 89–92. doi:10.1016/j.nimb.2013.11.025
info:cnr-pdr/source/autori:Barradas, Nuno P.; Alves, E.; Vieira, E. M. F.; Parisini, A.; Conde, O.; Martin-Sanchez, J.; Rolo, A. G.; Chahboun, A.; Gomes, M. J. M./titolo:IBA study of SiGe%2FSiO2 nanostructured multilayers/doi:10.1016%2Fj.nimb.2013.11.025/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2014/pagina_da:89/pagina_a:92/intervallo_pagine:89–92/volume:331
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
331 (2014): 89–92. doi:10.1016/j.nimb.2013.11.025
info:cnr-pdr/source/autori:Barradas, Nuno P.; Alves, E.; Vieira, E. M. F.; Parisini, A.; Conde, O.; Martin-Sanchez, J.; Rolo, A. G.; Chahboun, A.; Gomes, M. J. M./titolo:IBA study of SiGe%2FSiO2 nanostructured multilayers/doi:10.1016%2Fj.nimb.2013.11.025/rivista:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)/anno:2014/pagina_da:89/pagina_a:92/intervallo_pagine:89–92/volume:331
SiGe/SiO2 multilayers with layer thickness of 5 nm were deposited with RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were made to promote the formation of SiGe nanocrystals. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::067b1f1a8d285369bceb4f635f8f201b
Autor:
Anabela Rolo, Eduardo Alves, E M F Vieira, Adil Chahboun, Ivana Capan, Andrea Parisini, Sigrid Bernstorff, Maria de Jesus de Matos Gomes, Maja Micetic, Javier Martín Sánchez, Sergey Levichev, Nuno Pessoa Barradas, Olinda Conde
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Journal of applied physics 111 (2012): 104323. doi:10.1063/1.4722278
info:cnr-pdr/source/autori:E. M. F. Vieira, J. Martín-Sánchez, A. G. Rolo, A. Parisini, M. Buljan, I. Capan, E. Alves, N. P. Barradas, O. Conde, S. Bernstorff, A. Chahboun, S. Levichev, M. J. M. Gomes/titolo:Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe%2FSiO2 superlattice/doi:10.1063%2F1.4722278/rivista:Journal of applied physics/anno:2012/pagina_da:104323/pagina_a:/intervallo_pagine:104323/volume:111
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Journal of applied physics 111 (2012): 104323. doi:10.1063/1.4722278
info:cnr-pdr/source/autori:E. M. F. Vieira, J. Martín-Sánchez, A. G. Rolo, A. Parisini, M. Buljan, I. Capan, E. Alves, N. P. Barradas, O. Conde, S. Bernstorff, A. Chahboun, S. Levichev, M. J. M. Gomes/titolo:Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe%2FSiO2 superlattice/doi:10.1063%2F1.4722278/rivista:Journal of applied physics/anno:2012/pagina_da:104323/pagina_a:/intervallo_pagine:104323/volume:111
The authors would like also to thank José Santos for technical support.
In this work, SiGe/SiO2 multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at
In this work, SiGe/SiO2 multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa3510ef60e7d6fcb158222244d5d40d
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
In this work, CdSe nanocrystals (NCs) embedded in SiO(2) matrix were grown by radio frequency (RF)sputtering technique. X-ray technique was used to characterise the structural properties of the system. The NC's size was estimated to be around 4 +/- 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93f453d2e94f750d2069556ad5d412be
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
In this work post-growth annealing effect on CdSe/SiO2 thin films grown by rf-magnetron co-sputtering technique was investigated. Annealed samples were characterised by Raman scattering, grazing incidence X-ray diffraction and room temperature photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb52d6efa9615f8205521f72b28b922a
Autor:
Silvestre, A. J., Olinda Conde
Publikováno v:
CIÊNCIAVITAE
Scopus-Elsevier
Scopus-Elsevier
Results on the chemical composition, structure and growth kinetics of titanium nitride (TiN) films deposited on mild steel substrates by pyrolytic laser-induced chemical vapour deposition (LCVD) are presented. Golden coloured lines of TiN were deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f98d5451ccea13cdb3752f6f050e3c4c
http://arxiv.org/abs/cond-mat/0210461
http://arxiv.org/abs/cond-mat/0210461
Autor:
Oliveira, J. C., Olinda Conde
Publikováno v:
Scopus-Elsevier
CIÊNCIAVITAE
CIÊNCIAVITAE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9bd387ffc491282ac017fdea19947a1a
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031246625&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031246625&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
CIÊNCIAVITAE
Revista de Metalurgia; Vol. 34 No. 2 (1998); 206-209
Revista de Metalurgia; Vol. 34 Núm. 2 (1998); 206-209
Revista de Metalurgia
Consejo Superior de Investigaciones Científicas (CSIC)
CIÊNCIAVITAE
Revista de Metalurgia; Vol. 34 No. 2 (1998); 206-209
Revista de Metalurgia; Vol. 34 Núm. 2 (1998); 206-209
Revista de Metalurgia
Consejo Superior de Investigaciones Científicas (CSIC)
Micromachining of Al2O3-TiC ceramic using a KrF excimer laser was studied in the fluence range 2 to 8 J/cm2 . The ablation rate decreases and the roughness increases with the first pulses but after about 200 pulses the process reaches a stationary st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d70fa846181799e18415da2d95445b58
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032017459&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032017459&partnerID=MN8TOARS