Structural changes in multilayer systems containing InxGa1-xAs1-yNy quantum wells.

Autor: Fodehuk, I. M., Cevyk, V. B., Cimchinsky, O. C., Kislovskii, E. N., Kroytor, O. P., Motodkin, V. B., Olihovskii, S. I., Pavetescu, E. M., Pessa, M.

Publikováno v: Semiconductor Physics, Quantum Electronics & Optoelectronics; 2003, Vol. 6 Issue 4, p479-486, 8p