Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Olga Yu. Koval"'
Autor:
Svetlana A. Kadinskaya, Valeriy M. Kondratev, Ivan K. Kindyushov, Olga Yu. Koval, Dmitry I. Yakubovsky, Alexey Kusnetsov, Alexey I. Lihachev, Alexey V. Nashchekin, Irina Kh. Akopyan, Alexey Yu. Serov, Mariana E. Labzovskaya, Sergey V. Mikushev, Boris V. Novikov, Igor V. Shtrom, Alexey D. Bolshakov
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 58 (2022)
Zinc oxide (ZnO) nanostructures are widely used in various fields of science and technology due to their properties and ease of fabrication. To achieve the desired characteristics for subsequent device application, it is necessary to develop growth m
Externí odkaz:
https://doaj.org/article/93a8515a79f143bcb4a386cc23d4de4e
Autor:
Olga Yu. Koval, Vladimir V. Fedorov, Alexey D. Bolshakov, Igor E. Eliseev, Sergey V. Fedina, Georgiy A. Sapunov, Stanislav A. Udovenko, Liliia N. Dvoretckaia, Demid A. Kirilenko, Roman G. Burkovsky, Ivan S. Mukhin
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 960 (2021)
Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of
Externí odkaz:
https://doaj.org/article/12416cb40d8d4377a144d430d8ff235b
Autor:
Olga Yu. Koval, Vladimir V. Fedorov, Alexey D. Bolshakov, Sergey V. Fedina, Fedor M. Kochetkov, Vladimir Neplokh, Georgiy A. Sapunov, Liliia N. Dvoretckaia, Demid A. Kirilenko, Igor V. Shtrom, Regina M. Islamova, George E. Cirlin, Maria Tchernycheva, Alexey Yu. Serov, Ivan S. Mukhin
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2110 (2020)
Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured
Externí odkaz:
https://doaj.org/article/edfd9b65731041f383fb54b6a018740e
Autor:
Vladimir V. Fedorov, Olga Yu. Koval, Daniil R. Ryabov, Sergey V. Fedina, Igor E. Eliseev, Demid A. Kirilenko, Dmitry A. Pidgayko, Andrey A. Bogdanov, Yury M. Zadiranov, Alexandr S. Goltaev, Georgy A. Ermolaev, Aleksey V. Arsenin, Sergey V. Makarov, Anton K. Samusev, Valentyn S. Volkov, Ivan S. Mukhin
Publikováno v:
ACS Applied Nano Materials. 5:8846-8858
Autor:
Vladimir Neplokh, Regina M. Islamova, Olga Yu. Koval, Ivan Mukhin, Vlad A. Sharov, Fedor M. Kochetkov, Sergey V. Makarov, Konstantin V. Deriabin, Vladimir V. Fedorov, Dmitry Gets, Anna S. Miroshnichenko, Dmitry V. Krasnikov, Nikita A. Filatov, Vadim Yu. Kukushkin, Albert G. Nasibulin, Alexey M. Mozharov, Maria Baeva
Publikováno v:
The Journal of Physical Chemistry Letters. 12:9672-9676
The architecture of transparent contacts is of utmost importance for creation of efficient flexible light-emitting devices (LEDs) and other deformable electronic devices. We successfully combined the newly synthesized transparent and durable silicone
Autor:
Alexey D. Bolshakov, E. V. Pirogov, Demid A. Kirilenko, N. V. Kryzhanovskaya, Vladimir V. Fedorov, Olga Yu. Koval, A. Serov, Igor Shtrom, Nikolay G. Filosofov, Ivan Mukhin, G. A. Sapunov
Publikováno v:
CrystEngComm. 22:283-292
III–V/Si integration is one of the bottlenecks of modern semiconductor technology. Dilute nitride phosphides (III–P–N) are among the promising materials providing lattice matching with Si. In this work, we study the effect of growth conditions
Autor:
G. A. Sapunov, Alexey D. Bolshakov, V. A. Sharov, L N Dvoretckaia, Ivan Mukhin, Vladimir V. Fedorov, Olga Yu. Koval
Publikováno v:
Crystal Growth & Design. 20:300-306
The integration of direct bandgap III–V materials on Si is one of the main bottlenecks on the way to cheap and highly efficient optoelectronic devices. The goal of this work is to study the formati...
Autor:
Anna S, Miroshnichenko, Konstantin V, Deriabin, Maria, Baeva, Fedor M, Kochetkov, Vladimir, Neplokh, Vladimir V, Fedorov, Alexey M, Mozharov, Olga Yu, Koval, Dmitry V, Krasnikov, Vlad A, Sharov, Nikita A, Filatov, Dmitry S, Gets, Albert G, Nasibulin, Sergey V, Makarov, Ivan S, Mukhin, Vadim Yu, Kukushkin, Regina M, Islamova
Publikováno v:
The journal of physical chemistry letters. 12(39)
The architecture of transparent contacts is of utmost importance for creation of efficient flexible light-emitting devices (LEDs) and other deformable electronic devices. We successfully combined the newly synthesized transparent and durable silicone
Autor:
Vladimir V. Fedorov, E. V. Pirogov, M. S. Sobolev, Alexey M. Mozharov, Ivan Mukhin, Olga Yu. Koval, Demid A. Kirilenko, Alexey D. Bolshakov, G. A. Sapunov
Publikováno v:
Crystal Growth & Design. 19:4510-4520
III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen concentration up to 2.12% were grown on Si(001) by plasma assisted molecular beam epitaxy. Dependence of nitrogen incorporation on the growth conditions and its effect
Autor:
L N Dvoretckaia, R. G. Burkovsky, Ivan Mukhin, Olga Yu. Koval, Igor E. Eliseev, Sergey V. Fedina, Vladimir V. Fedorov, G. A. Sapunov, Alexey D. Bolshakov, Demid A. Kirilenko, Stanislav A. Udovenko
Publikováno v:
Nanomaterials
Nanomaterials, Vol 11, Iss 960, p 960 (2021)
Volume 11
Issue 4
Nanomaterials, Vol 11, Iss 960, p 960 (2021)
Volume 11
Issue 4
Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of