Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Olga Markowska"'
Publikováno v:
Infrared Physics & Technology. 122:104076
Publikováno v:
Optical and Quantum Electronics. 52
Using our own computer program, we determined the spatial distribution of lattice strains in the HgCdTe heterostructure grown on a GaAs substrate. Lattice stress resulting from lattice mismatch between the substrate and the epitaxial layer and bendin
Autor:
Jozef Piotrowski, Paweł Madejczyk, A. Jóźwikowska, Małgorzata Kopytko, Antoni Rogalski, Andrzej Kowalewski, Piotr Martyniuk, Olga Markowska, K. Jóźwikowski, Waldemar Gawron, Andrzej Martyniuk
Publikováno v:
Journal of Electronic Materials. 46:5471-5478
We present the results of numerical simulations and experimental data of band gap-engineered higher operating temperature mercury cadmium telluride barrier photodiodes working in a middle wavelength infrared radiation and a long wavelength infrared r
Autor:
Piotr Martyniuk, Antoni Rogalski, Paweł Madejczyk, Andrzej Kowalewski, Małgorzata Kopytko, Olga Markowska, K. Jóźwikowski, Jaroslaw Rutkowski, Waldemar Gawron
Publikováno v:
Journal of Electronic Materials. 45:4563-4573
In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technolo
Publikováno v:
12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods.
Most of the HgCdTe infrared detectors are fabricated by mesa geometry using a wet chemical or plasma etching techniques. The mesa definition etch process induces undesirable changes in HgCdTe surface properties. In narrow bandgap materials these surf
Autor:
Ł. Kubiszyn, Olga Markowska, A. Kębłowski, Krystian Michalczewski, Jaroslaw Rutkowski, Jozef Piotrowski, Emilia Gomółka, Piotr Martyniuk, Antoni Rogalski, Waldemar Gawron, Małgorzata Kopytko, Jarosław Jureńczyk
Publikováno v:
Optical Engineering. 57:1
We investigate the high-operating temperature performance of InAsSb/AlSb heterostructure detectors with cutoff wavelengths near 5 μm at 230 K. The devices have been fabricated with different types of absorbing layers: nominally undoped absorber (wit
Autor:
Piotr Martyniuk, Waldemar Gawron, Antoni Rogalski, Małgorzata Kopytko, K. Jóźwikowski, A. Kębłowski, Paweł Madejczyk, Olga Markowska
Publikováno v:
SPIE Proceedings.
The work reports on mid-wavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapour deposition on GaAs substrates. The experiments indicate the influence of the barrier on electrical and optica
Autor:
Andrzej Kolek, Olga Markowska, Antoni Rogalski, Andrzej Kowalewski, P. Pta, L. Ciura, Z. Zawislak, Jarosław Wróbel
Publikováno v:
2015 International Conference on Noise and Fluctuations (ICNF).
The paper concerns the correlations between low-frequency noise and dark currents in the p-i-n diode made of type-II InAs/GaSb superlattice material designed for mid-wavelength infrared. It is shown that diffusion and generation-recombination current
Autor:
Antoni Rogalski, Piotr Martyniuk, Olga Markowska, Waldemar Gawron, K. Jóźwikowski, A. Kębłowski, Paweł Madejczyk, Małgorzata Kopytko, Andrzej Kowalewski
Publikováno v:
Optical Engineering. 54:105105
In the last decade, new architecture designs such as nBn devices or unipolar barrier photodiodes have been proposed to achieve high-operating temperature (HOT) detectors. This idea has been also implemented in HgCdTe ternary material systems. However