Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Olga M. Sreseli"'
Autor:
A. V. Ershov, D. N. Goryachev, E. V. Beregulin, M. A. Elistratova, Olga M. Sreseli, N. A. Bert, V. N. Nevedomskii
Publikováno v:
Semiconductors. 54:1315-1319
The properties of multilayer α-Si(Ge)/SiO2 nanostructures deposited onto p-Si substrates and annealed at various temperatures are investigated. The total nanolayer thickness is no larger than 300–350 nm. It is found that despite the formation of c
Autor:
I. N. Yassievich, A. N. Yablonsky, V. N. Nevedomskii, Olga M. Sreseli, Aleksey Nezhdanov, N. A. Bert, A. I. Lihachev, Aleksandr Mashin, A. V. Ershov, Boris A. Andreev
Publikováno v:
Semiconductors. 54:181-189
Structures with Ge/Si nanoparticles (quantum dots) in an aluminum-oxide matrix are of interest due to the combination of two basic semiconductors and the use of a matrix with a high permittivity and strong oxygen–metal bonding. In this study, multi
Publikováno v:
Semiconductors. 53:51-54
The goal of this work is to study the processes of self-organization in tetraphenylporphyrin (H2TPP) films made by condensation under various conditions. Experimental studies of the spectral characteristics of H2TPP thin films obtained by the liquid
Publikováno v:
Semiconductors. 52:1193-1197
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in th
Publikováno v:
Semiconductors. 52:1051-1055
Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (F
Publikováno v:
Technical Physics Letters. 44:287-290
C–V characteristics and DLTS spectra of heterostructures made up of layers of closely packed amorphous Si nanoparticles deposited by laser electrodispersion onto single-crystal p-Si substrates have been examined. The patterns observed in the behavi
Publikováno v:
Semiconductors. 51:483-487
The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the la
Publikováno v:
physica status solidi (a). 213:2906-2910
Silicon-based structures comprised of crystalline silicon substrates and active layers of mixed silicon and gold nanoparticles were fabricated and characterized. Several layer compositions were studied. The investigated structures demonstrate very la
Autor:
V. Yu. Davydov, O. S. Ken, V. S. Levitskii, Sergey A. Gurevich, Olga M. Sreseli, D. A. Yavsin
Publikováno v:
Semiconductors. 50:418-425
Composite Si–Au layers prepared by laser electrodispersion with different Si:Au ratios are studied. The microscopic structure of the layers is established and their Raman spectra and optical transmission and reflectance spectra are investigated. It
Publikováno v:
Journal of Physics: Conference Series. 1482:012009
Photoluminescence of 5,10,15,20-tetraphenylporphyrin (H2TPP) on nanoporous silicon substrates has been studied. Used nanoporous silicon has a visible PL in the region of H2TPP absorption. Reradiation of porous silicon photoluminescence to the tetraph