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pro vyhledávání: '"Olga Burunova"'
Autor:
O.I. Velichko, Olga Burunova
Publikováno v:
Defect and Diffusion Forum. :27-32
Simulation of arsenic clustering in Si at a temperature of 750 degrees Celsius has been carried out. It has been shown that considering the formation of singly or doubly negatively charged clusters that incorporate one or two arsenic atoms and point
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f13cb488ebf933d4c96e0f0890af05
https://doi.org/10.4028/www.scientific.net/ddf.295-296.27
https://doi.org/10.4028/www.scientific.net/ddf.295-296.27
