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Autor:
Aleksandr V. Shklyaev, A. V. Nenashev, Olga Borodavchenko, A. V. Dvurechenskii, A. V. Mudryi, S. V. Trubina, Vadim Zhivulko, A. F. Zinovieva, Simon Erenburg, S. A. Teys, Vladimir Zinovyev, Zhanna Smagina
Publikováno v:
physica status solidi c. 14:1700187
The photoluminescence (PL) properties of combined Ge/Si structures representing a combination of large (200–250 nm) SiGe disk-like quantum dots (QDs) and the groups of smaller (40–50 nm) laterally ordered QDs grown on the nanodisk surface are stu