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Autor:
Ulyana M. Matveyenka, Elena A. Skryleva, Elena N. Abramova, Roman Yu. Kozlov, Pavel V. Pavlov, Ivan V. Sidelnikov, Olesya S. Pavlova
Publikováno v:
Modern Electronic Materials, Vol 10, Iss 3, Pp 167-175 (2024)
Rapid development of III–V semiconductor device technologies and broadening of device applications are hindered by the high density of surface states produced in those materials by intrinsic complex oxides and surface contaminations. Surface oxides
Externí odkaz:
https://doaj.org/article/06056690f148439ab979829ab565a1b8
