Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Oleksandr Savchyn"'
Autor:
Oleksandr Savchyn
Publikováno v:
Psycholinguistics in a Modern World. 15:217-220
The experience gained by the author during the approbation / implementation of «Author’s motivational linguistic and pedagogical technology of forming stable skills in creating of different types stories by older preschool children» in PEI (presc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::496886edd3bbff203c154ce95ac0545a
https://doi.org/10.31470/2706-7904-2020-15-217-220
https://doi.org/10.31470/2706-7904-2020-15-217-220
Autor:
Oleksandr, Savchyn
The lack of effective pedagogical technologies for the stable skills formation of creation and appropriate use of comprehensive typing stories in children of 5-6 years of age, significantly reduces the effective preparation of senior preschoolers for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14e54cd6a13ea8910aa017a57abb7f3b
Autor:
Larysa Kalmykova, Nataliya Kharchenko, Vitalii Shymko, Tamara Tkach, Lubov Lokhvytska, Olena Borysova, Nataliya Borysova, Mariya Karpuk, Neonila Pobirchenko, Olena Usyk, Tamara Andreieva, Ninel Khymych, Olena Lytvyshko, Iryna Volzhentseva, Svitlana Demianenko, Yulia Krolivets, Nataliya Rudkivska, Nataliya Gavrysh, Olena Reipolska, Tamiliya Dotsevych, Inna Mysan, Olena Chernyakova, Oleksandr Savchyn
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2798f3a9c9bc56f649abb2600e134738
https://doi.org/10.2139/ssrn.3725187
https://doi.org/10.2139/ssrn.3725187
Publikováno v:
Optical Materials. 32:1274-1278
The high-temperature photoluminescence of Er-doped Si-rich SiO2 with and without silicon nanocrystals is studied at sample temperatures in the range 20–200 C. The optical properties of Er-doped Si-rich SiO2 with and without silicon nanocrystals are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7c5807fc82ec465cacbe321d2cf657
https://doi.org/10.1016/j.optmat.2010.04.037
https://doi.org/10.1016/j.optmat.2010.04.037
Publikováno v:
Physical Review B. 77
The influence of hydrogen passivation on luminescence-center-mediated excitation of ${\text{Er}}^{3+}$ in Er-doped Si-rich ${\text{SiO}}_{2}$ films with significantly different microstructures is studied. Photoluminescence measurements are presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec16dbf4beb47453eb9bdb4d7a47fd5e
https://doi.org/10.1103/physrevb.77.205438
https://doi.org/10.1103/physrevb.77.205438
Autor:
Forrest R. Ruhge, Helge Heinrich, Haritha Nukala, Oleksandr Savchyn, Pieter G. Kik, Ravi M. Todi, Kevin R. Coffey
Publikováno v:
Physical Review B. 76
The structural and optical properties of erbium-doped silicon-rich silica samples containing $12\phantom{\rule{0.3em}{0ex}}\mathrm{at.}\phantom{\rule{0.2em}{0ex}}%$ of excess silicon and $0.63\phantom{\rule{0.3em}{0ex}}\mathrm{at.}\phantom{\rule{0.2e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f550a1e0c9589a99a27637301b0f674d
https://doi.org/10.1103/physrevb.76.195419
https://doi.org/10.1103/physrevb.76.195419
Publikováno v:
Applied Physics Letters. 97:201107
The presence of indirect Er3+ excitation in Si-rich SiO2 is demonstrated for Si-excess concentrations in the range of 2.5–37 at. %. The Si excess concentration providing the highest density of sensitized Er3+ ions is demonstrated to be relatively i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a66d8dd2659a0aa8a299790364317681
https://doi.org/10.1063/1.3518476
https://doi.org/10.1063/1.3518476
Autor:
Pieter G. Kik, Kevin R. Coffey, Ravi M. Todi, Luis K. Ono, Beatriz Roldan Cuenya, Oleksandr Savchyn
Publikováno v:
Applied Physics Letters
Erbium sensitization is observed in as-deposited Er3+ doped Si-rich SiO2, ruling out the involvement of Si nanocrystals in the Er3+ excitation in these samples. The Er3+excitation cross section in this material is similar within a factor 3 to that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbb7d040886144d8e7f756a3276ada27
https://doi.org/10.1063/1.3272271
https://doi.org/10.1063/1.3272271
Publikováno v:
Applied Physics Letters. 94:241115
Time-dependent photoluminescence measurements of low-temperature-annealed Er-doped Si-rich SiO2 were conducted at sample temperatures 15–300 K. The erbium internal relaxation efficiency from the second (I411/2) to the first (I413/2) excited state u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f26500eb373bf4906718495d3c84b4f
https://doi.org/10.1063/1.3157135
https://doi.org/10.1063/1.3157135