Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Oleksandr I Datsenko"'
Autor:
Sergii Golovynskyi, Oleksandr I. Datsenko, Luca Seravalli, Giovanna Trevisi, Paola Frigeri, Ivan S. Babichuk, Iuliia Golovynska, Junle Qu
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract Photoelectric properties of the metamorphic InAs/In x Ga1 − x As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoreti
Externí odkaz:
https://doaj.org/article/834be4d5801e4cc3b59b60f6a205fc6a
Autor:
Sergii Golovynskyi, Oleksandr I. Datsenko, Muhammad Usman, Ana I. Pérez-Jiménez, Marc Chaigneau, Matteo Bosi, Luca Seravalli, Tarek Hidouri, Iuliia Golovynska, Baikui Li, Honglei Wu
Publikováno v:
Applied Surface Science. 624:157128
Autor:
Zhiyuan Wang, Feihong Zhang, Oleksandr I. Datsenko, Sergii Golovynskyi, Zhenhua Sun, Baikui Li, Honglei Wu
Publikováno v:
Journal of Alloys and Compounds. 946:169350
Autor:
Danying Lin, Sergii Golovynskyi, Iqra Irfan, Baikui Li, Yan Lin, Dan Dong, Oleksandr I. Datsenko, Junle Qu
Publikováno v:
The Journal of Physical Chemistry C. 125:17806-17819
Autor:
Chun Huang, Jian Yang, Mykola O. Semenenko, Rui Hu, Roman Ziniuk, Ran Qiu, Sergii Golovynskyi, Máximo León, I.V. Babichuk, Raquel Caballero, O.A. Kapush, M. O. Stetsenko, I.S. Babichuk, Junle Qu, Baikui Li, Oleksandr I. Datsenko
Publikováno v:
Solar Energy. 205:154-160
A Cu2ZnSnS4 (CZTS) thin film deposited on Mo contact film using direct current magnetron sputtering and sulfurized is studied. The morphological and structural investigations are focused on the interface between the CZTS film and the back Mo layer. T
Autor:
Yurii A. Romaniuk, Alexander P. Litvinchuk, I.S. Babichuk, Junle Qu, Matteo Bosi, Sergii Golovynskyi, Volodymyr O. Yukhymchuk, Oleksandr I. Datsenko, Luca Seravalli, Dan Dong, Baikui Li, Yan Lin
Publikováno v:
Physica. E, Low-dimensional systems and nanostructures
136 (2022): 114999-1–114999-11. doi:10.1016/j.physe.2021.114999
info:cnr-pdr/source/autori:Romaniuk Yurii A.; Golovynskyi S.; Litvinchuk A.P.; Dong D.; Lin Y.; Datsenko O.I.; Bosi M.; Seravalli L.; Babichuk I.S.; Yukhymchuk, V.O.; Li B.; Qu J./titolo:Influence of anharmonicity and interlayer interaction on Raman spectra in mono-and few-layer MoS2: A computational study/doi:10.1016%2Fj.physe.2021.114999/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2022/pagina_da:114999-1/pagina_a:114999-11/intervallo_pagine:114999-1–114999-11/volume:136
136 (2022): 114999-1–114999-11. doi:10.1016/j.physe.2021.114999
info:cnr-pdr/source/autori:Romaniuk Yurii A.; Golovynskyi S.; Litvinchuk A.P.; Dong D.; Lin Y.; Datsenko O.I.; Bosi M.; Seravalli L.; Babichuk I.S.; Yukhymchuk, V.O.; Li B.; Qu J./titolo:Influence of anharmonicity and interlayer interaction on Raman spectra in mono-and few-layer MoS2: A computational study/doi:10.1016%2Fj.physe.2021.114999/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2022/pagina_da:114999-1/pagina_a:114999-11/intervallo_pagine:114999-1–114999-11/volume:136
Two-dimensional (2D) MoS2 possesses unique optical and electrical properties and has many practical applications in nano-optoelectronics. Raman spectroscopy allows readily identify monolayer of MoS2, but the unambiguous determination of the number of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46668fa8b55c22bc656c310ac9c85ff0
http://www.cnr.it/prodotto/i/464068
http://www.cnr.it/prodotto/i/464068
Autor:
Sergii Golovynskyi, Oleksandr I. Datsenko, Dan Dong, Yan Lin, Iuliia Golovynska, Zijing Jin, Baikui Li, Honglei Wu
Publikováno v:
Applied Surface Science. 601:154209
Autor:
Oleksandr I. Datsenko, Sergii Golovynskyi, Isaac Suárez, Guillermo Muñoz-Matutano, Giovanna Trevisi, Paola Frigeri, Luca Seravalli
Publikováno v:
Microelectronic Engineering. 263:111840
Autor:
Serhii Derenko, Sergiy V. Kondratenko, Yuriy I. Mazur, Oleksandr I. Datsenko, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXIX.
We report a study of the photoconductivity mechanism and transport paths of photoexcited charge carriers in the GeSn/Ge/Si heterostructures. The dark conductivity was studied as a function of temperature, which allowed to identify of the presence of
Autor:
Giovanna Trevisi, Luca Seravalli, Junle Qu, Paola Frigeri, Sergii Golovynskyi, Oleksandr I. Datsenko, Baikui Li
Publikováno v:
Springer Proceedings in Physics ISBN: 9783030522674
In(Ga)As quantum dots (QDs) are used in photonic and electronic devices with novel functionalities [1, 2, 3, 4, 5], advanced energy-efficient ‘green’ communication systems with ultra-large bit rate such as energy-efficient lasers [6, 7] and QD op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb889577de75ce2355dfa38de4de258d
https://doi.org/10.1007/978-3-030-52268-1_25
https://doi.org/10.1007/978-3-030-52268-1_25