Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates.

Autor: Olego, D. J., Okuno, Y., Kawano, T., Tamura, M.

Publikováno v: Journal of Applied Physics; 5/1/1992, Vol. 71 Issue 9, p4492, 10p

Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy.

Autor: Olego, D. J., Tamura, M., Okuno, Y., Kawano, T., Hashimoto, A.

Publikováno v: Journal of Applied Physics; 5/1/1992, Vol. 71 Issue 9, p4329, 4p, 1 Black and White Photograph, 2 Graphs

Raman scattering characterization of the microscopic structure of semi-insulating polycrystalline Si thin films.

Autor: Olego, D. J., Baumgart, H.

Publikováno v: Journal of Applied Physics; 4/15/1988, Vol. 63 Issue 8, p2669, 5p, 1 Chart, 3 Graphs

Transmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular-beam epitaxy.

Autor: Petruzzello, J., Olego, D. J., Chu, X., Faurie, J. P.

Publikováno v: Journal of Applied Physics; 3/1/1988, Vol. 63 Issue 5, p1783, 3p, 3 Black and White Photographs

Optical Spectroscopy of a Nitrogen-Hydrogen Complex in ZnSe

Autor: Wolk, J. A., Joel Ager, Duxstad, K. J., Haller, E. E., Taskar, N. R., Dorman, D. R., Olego, D. J.

Publikováno v: Wolk, J.A.; Ager, J.W.; Duxstad, K.J.; Haller, E.E.; Taskar, N.R.; Dorman, D.R.; et al.(1994). Optical Spectroscopy of a Nitrogen-Hydrogen Complex in ZnSe. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/46d1h40h
Scopus-Elsevier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c442a09f9549a2c6a448c18a5427ce50
http://www.escholarship.org/uc/item/46d1h40h